Search for dissertations about: "modeling of MOSFET THESIS"

Showing result 1 - 5 of 14 swedish dissertations containing the words modeling of MOSFET THESIS.

  2. 1. Modeling and characterization of novel MOS devices

    Author : Stefan Persson; KTH; []
    Keywords : MOSFET; SiGe; high-k dielectric; metal gate; mobility; charge sheet model; retrograde channel structure; intrinsic charge; intrinsic capacitance; contact resistivity;

    Abstract : Challenges with integrating high-κ gate dielectric,retrograde Si1-xGexchannel and silicided contacts in future CMOStechnologies are investigated experimentally and theoreticallyin this thesis. ρMOSFETs with either Si or strained Si1-xGex surface-channel and different high-κgate dielectric are examined. READ MORE

  4. 2. Advanced TCAD Simulations and Characterization of Semiconductor Devices

    Author : Tony Ewert; Jörgen Olsson; Marcel Pelgrom; Uppsala universitet; []
    Keywords : Electronics; MOSFET; RDF; random dopant fluctuation; asymmetric; parametric mismatch; TCAD; compact modeling; fluctuation model; Elektronik;

    Abstract : Today, micro- and nano-electronic devices are becoming more complex and advanced as the dimensions are shrinking. It is therefore a very challenging task to develop new device technologies with performance that can be predicted. READ MORE

  5. 3. Fabrication, characterization, and modeling of metallic source/drain MOSFETs

    Author : Valur Gudmundsson; Per-Erik Hellström; Yee-Chia Yeo; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;

    Abstract : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). READ MORE

  6. 4. Simulation and Optimization of SiC Field Effect Transistors

    Author : Kent Bertilsson; Mittuniversitetet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; MOSFET; MESFET; Thermal Effects; Device modeling; Optimization; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik;

    Abstract : .... READ MORE

  7. 5. High Frequency Analysis of Silicon RF MOS Transistors

    Author : Johan Ankarcrona; Jörgen Olsson; Kjell Jeppson; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; RF-power; LDMOS; Microwave transistor; SOI; Silicon; MOSFET; Elektronik; Electronics; Elektronik;

    Abstract : Today, the silicon technology is well established for RF-applications (f~1-100 GHz), with emphasis on the lower frequencies (f < 5 GHz). The field of RF power devices is extensive concerning materials and devices. One of the important RF-devices is the silicon LDMOS transistor. READ MORE