Search for dissertations about: "molecular-beam epitaxy"

Showing result 1 - 5 of 46 swedish dissertations containing the words molecular-beam epitaxy.

  2. 1. Growth of ZnO/GaN distributed Bragg reflectors by plasma-assisted molecular beam epitaxy

    Author : David Adolph; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Oxides; GaN; distributed Bragg reflector; MBE; molecular beam epitaxy; ZnO; Nitrides; DBR;

    Abstract : This thesis describes epitaxial growth of ZnO/GaN distributed Bragg reflectors by hybrid plasma-assisted molecular beam epitaxy on GaN(0001). The unique hybrid approach employed the same growth chamber for continuous growth of both ZnO and GaN without exposing the layers to the ambient conditions. READ MORE

  4. 2. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

    Author : Stefan Davidsson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; two-dimensional electron gas; MBE; Al2< sub>O3< sub>; epitaxial growth; III-nitride; molecular beam epitaxy; GaN; nucleation layer; nitridation; AlGaN; HFET; 2DEG density; AlN; 2DEG; buffer layer; sapphire; 2DEG mobility; heterostructure field effect transistor;

    Abstract : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. READ MORE

  5. 3. Growth and Characterization of Strain-engineered Si/SiGe Heterostructures Prepared by Molecular Beam Epitaxy

    Author : Ming Zhao; Wei-Xin Ni; Göran Hansson; Kang L. Wang; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Si SiGe; Strain engineering; Molecular beam epitaxy; THz; Quantum cascade; Strain relaxation; Materials science; Teknisk materialvetenskap;

    Abstract : The strain introduced by lattice mismatch is a built-in characteristic in Si/SiGe heterostructures, which has significant influences on various material properties. Proper design and precise control of strain within Si/SiGe heterostructures, i.e. READ MORE

  6. 4. Initial growth of GaN on sapphire and growth of AlGaN on GaN by molecular beam epitaxy

    Author : Stefan Davidsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MBE; 2DEG; heterostructure field effect transistor; molecular beam epitaxy; epitexial growth; GaN; III-nitride; AlGaN; two dimensional electron gas; HFET; AlN;

    Abstract : .... READ MORE

  7. 5. GaN, AlGaN, GaNAs and Related Heterostructures Grown by Molecular Beam Epitaxy

    Author : Hyonju Kim; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; surface segregation; GaNAs; plasma-assisted MBE; stacking fault; AlGaN GaN; heterointerface; unintentional impurities; III-nitrides;

    Abstract : This work deals with growth and characterization of III-nitrides and related heterostructures as well as GaNAs alloys grown by plasma assisted molecular beam epitaxy (MBE). The III-nitrides belong to the wide bandgap semiconductors due to their large energy bandgap spanning from 1.9 to 6.2 eV. READ MORE