Search for dissertations about: "nanowire capacitance"

Showing result 1 - 5 of 15 swedish dissertations containing the words nanowire capacitance.

2. 1. Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications

   Author : Adam Jönsson; Nanoelektronik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; CMOS; RRAM; III-V; InAs; GaSb; InGaAs; Heterostructure; vertical; nanowire NW ; MOSFET; III-V materials; RRAM; RF; CMOS; InAs; GaSb; InGaAs; heterostructure; Vertical nanowire;

   Abstract : This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. READ MORE

4. 2. InGaAs Nanowire and Quantum Well Devices

   Author : Lasse Södergren; NanoLund: Centre for Nanoscience; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowire; quantum well; cryogenic; III-V; InGaAs; MOSFET; MOVPE; Hall; mobility; ballistic; RF;

   Abstract : To fulfill the increasing demand for high-speed electronics used for computation or communication is one everlasting challenge for the semiconductor industry. Emerging fields such as quantum computation also has a need for circuits operating at cryogenic temperatures. READ MORE

5. 3. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

   Author : Jun Wu; Institutionen för elektro- och informationsteknik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

   Abstract : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. READ MORE

6. 4. III-V Nanowire MOSFET High-Frequency Technology Platform

   Author : Stefan Andric; Nanoelektronik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; III-V; nanowire NW ; Technology library; Process Monitor Structures; Radio Frequency; millimeter wave mmWave ; Compact Modelling; Circuit Design; Matching Networks; Low Noise Amplifier;

   Abstract : This thesis addresses the main challenges in using III-V nanowireMOSFETs for high-frequency applications by building a III-Vvertical nanowire MOSFET technology library. The initial devicelayout is designed, based on the assessment of the current III-V verticalnanowire MOSFET with state-of-the-art performance. READ MORE

7. 5. Novel Processing and Electrical Characterization of Nanowires

   Author : Kristian Storm; Fasta tillståndets fysik; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Gate; Capacitance; Hall effect; InP; InAs; Characterization; Nanowires; Processing; LED; Transistor; Fysicumarkivet A:2013:Storm;

   Abstract : This thesis investigates novel electrical nanowire characterization tools and devices. Conventional characterization methods, long available to bulk semiconductor samples, have been adapted and transferred to the nanowire geometry. READ MORE