Search for dissertations about: "oxide growth"

Showing result 1 - 5 of 328 swedish dissertations containing the words oxide growth.

  2. 1. Nitric oxide : An ally in extracorporeal circulation?

    Author : Vilyam Melki; Jan Borowiec; Örjan Friberg; Uppsala universitet; []
    Keywords : MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES; Simulated extracorporeal circulation; Inflammation; Nitric oxide; Leukocyte activation; Staphylococcus aureus; Glyceryl trinitrate; Postoperative infection; Thorax Surgery; Thoraxkirurgi;

    Abstract : Many complications associated with heart surgery are due to the negative effects of extracorporeal circulation (ECC). Some of these complications may be attributed to ECC-induced activation of inflammation and coagulation pathways. READ MORE

  4. 2. The Buried Oxide of Silicon on Insulator Materials

    Author : Per Ericsson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; oxide defects; internal oxidation; aluminum oxide; wafer bonding; SOI; silicon on insulator; buried oxide;

    Abstract : The buried oxide of silicon on insulator (SOI) wafers plays an important role in the operation of electronic devices made on such materials. The presence of defects in the buried oxide can seriously degrade the performance of a circuit. READ MORE

  5. 3. Zinc Oxide Bulk and Nanorods

    Author : Peter Klason; Göteborgs universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; zinc oxide; Schottky contact; buckling; annealing; semiconductor growth; ion implantation; photoluminescence; nanorods;

    Abstract : Zinc Oxide (ZnO) has many promising properties for optoelectronics, sensor applications, transparent electronics etc. To mention a few, ZnO has a large exciton binding energy (60 meV at room temperature) and a direct wide bandgap energy of 3.37 eV. In addition, ZnO is piezoelectric and shows more resistance to radiation damage than Si and GaN. READ MORE

  6. 4. Silicon nanowire based devices for More than Moore Applications

    Author : Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
    Keywords : silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE

  7. 5. ZnO and CuO Nanostructures: Low Temperature Growth, Characterization, their Optoelectronic and Sensing Applications

    Author : Gul Amin; Magnus Willander; Omer Nour; Anastasios Travlos; Linköpings universitet; []
    Keywords : Zinc oxide; Copper II oxide; Nanostructures; Hydrothermal growth; Light emitting diodes.;

    Abstract : One dimensional (1-D), zinc oxide (ZnO) and copper (II) oxide (CuO), nanostructures have great potential for applications in the fields of optoelectronic and sensor devices. Research on nanostructures is a fascinating field that has evolved during the last few years especially after the utilization of the hydrothermal growth method. READ MORE