Search for dissertations about: "p-n diodes"

Showing result 1 - 5 of 16 swedish dissertations containing the words p-n diodes.

  2. 1. Noise Aspects of some Si-based One Port Devices and Carbon Nanotubes

    Author : Hassan Ouacha; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; etching; Schottky contacts; noise; fluctuations; generation; mobility; noise spectroscopy; recombination; p-n diodes; carbon nanotubes; thermal reaction; junction; defects; co-sputtering; irradiation; interface states; low frequency noise;

    Abstract : The p-n junctions and Schottky diodes based on Si1-xGex and SiC are of great importance in modern electronic applications, such as microwave detectors and mixers. Carbon nanotubes (CNTs) have appeared recently as an attractive new class of materials with a reduced dimensionality, and proposed as building blocks for nanoelectronic technology. READ MORE

  4. 2. Design, Processing and Characterization of Silicon Carbide Diodes

    Author : Uwe Zimmermann; KTH; []
    Keywords : silicon carbide; diodes; high-voltage; dislocations; electronics;

    Abstract : Electronic power devices made of silicon carbide promisesuperior performance over today's silicon devices due toinherent material properties. As a result of the material'swide band gap of 3. READ MORE

  5. 3. Lighting and Sensing Applications of Nanostructured ZnO, CuO and Their Composites

    Author : Ahmed ELtahir Elsharif Zainelabdin; Magnus Willander; Omer Nour; Leonard J. Brillson; Linköpings universitet; []
    Keywords : ZnO; CuO; Nanostructures; Composites; ZnO polymer LEDs; humidity sensor; p-n heterojunction;

    Abstract : Low dimensional nanostructures of zinc oxide (ZnO), cupric oxide (CuO), and their composite nanostructures possess remarkable physical and chemical properties. Fundamental understanding and manipulation of these unique properties are crucial for all potential applications. READ MORE

  6. 4. Simulation and Electrical Evaluation of 4H-SiC Junction Field Effect Transistors and Junction Barrier Schottky Diodes with Buried Grids

    Author : Jang-Kwon Lim; Hans-Peter Nee; Mietek Bakowski; Ichiro Omura; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon carbide SiC ; junction field-effect transistors JFETs ; junction barrier schottky diode JBS ; schottky barrier diode SBD ; buried-grid BG technology; simulation; implantation; epitaxial growth; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Silicon carbide (SiC) has higher breakdown field strength than silicon (Si), which enables thinner and more highly doped drift layers compared to Si. Consequently, the power losses can be reduced compared to Si-based power conversion systems. Moreover, SiC allows the power conversion systems to operate at high temperatures up to 250 oC. READ MORE

  7. 5. Junction Engineering in Nanostructured Optoelectronic Devices

    Author : Ali Nowzari; NanoLund: Centre for Nanoscience; []
    Keywords : Nanowire; Solar cell; Photodetector; Light Emitting Diode; Doping Evaluation; Fysicumarkivet A:2018:Nowzari;

    Abstract : Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. READ MORE