Search for dissertations about: "resonant tunnelling diodes"

Found 4 swedish dissertations containing the words resonant tunnelling diodes.

  2. 1. Three-Dimensional Metal-Semiconductor Heterostructures for Device Applications

    Author : Lars-Erik Wernersson; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Schottky contacts; space-charge spectroscopy; ballistic transport; Coulomb repulsion; electron interference; resonant tunnelling; lateral confinement; heterojunction permeable base transistor; resonant tunnelling diodes; Fysicumarkivet A:1998:Wernersson; Fysik; Physics; resonant tun; epitaxial overgrowth;

    Abstract : Fabrication and characterisation of buried metal contacts in compound semiconductors are demonstrated. The contacts have been investigated due to their usage both as gates in transistors and as active or passive elements in novel devices. READ MORE

  4. 2. Compact and Efficient Millimetre-Wave Circuits for Wideband Applications

    Author : Lars Ohlsson; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; resonant-tunnelling diode; millimetre-wave spectrum; integrated transmitter; energy-efficiency; compact circuit; dielectric resonator antenna; transistor; wavelet generator; wideband.;

    Abstract : Radio systems, along with the ever increasing processing power provided by computer technology, have altered many aspects of our society over the last century. Various gadgets and integrated electronics are found everywhere nowadays; many of these were science-fiction only a few decades ago. READ MORE

  5. 3. Design and Fabrication of III-V Semiconductor Devices for Millimetre- and Submillimetre Wave Applications

    Author : Svein M. Nilsen; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Devices (various types of diodes) have been fabricated in several different III-V semiconductors (AlxGa1-xAs, In1-xGaxAs, and InAs). The III- V compound semiconductors lend themselves well to high frequency applications due to the high electron mobility that can be obtained. READ MORE

  6. 4. Epitaxial growth of semiconductor nanowires

    Author : Ann Persson; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; materialteknik; nanowires; nanostructures; growth mechanism; Materiallära; Material technology; Halvledarfysik; Semiconductory physics; nanoelectronics; Au; VSS; VLS; surface diffusion; band gap engineering; InP; ternary system; GaAs; heterostructures; InAs; CBE; epitaxy;

    Abstract : This thesis describes the results obtained from investigations carried out on epitaxially grown III-V semiconductor nanowires aimed at improving our understanding of and knowledge on the growth mechanism of nanowires. This is important to be able to control their growth, in order to make future applications possible. READ MORE