Search for dissertations about: "rf switching"

Showing result 1 - 5 of 26 swedish dissertations containing the words rf switching.

  2. 1. Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications

    Author : Adam Jönsson; Nanoelektronik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; CMOS; RRAM; III-V; InAs; GaSb; InGaAs; Heterostructure; vertical; nanowire NW ; MOSFET; III-V materials; RRAM; RF; CMOS; InAs; GaSb; InGaAs; heterostructure; Vertical nanowire;

    Abstract : This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. READ MORE

  4. 2. Monocrystalline-Silicon Based RF MEMS Devices

    Author : Mikael Sterner; Joachim Oberhammer; Roberto Sorrentino; KTH; []
    Keywords : RF MEMS; radio frequency; microelectromechanical system; microsystem technology; monocrystalline silicon; switch; tuneable capacitor; high-impedace surface; phase shifter; rectangular waveguide; transmission line;

    Abstract : This thesis presents novel radio-frequency microelectromechanical (RF MEMS) devices, for microwave and millimeter wave applications, designed for process robustness and operational reliability using monocrystalline silicon as structural material. Two families of RF MEMS devices are proposed. READ MORE

  5. 3. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

    Author : Jun Wu; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

    Abstract : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. READ MORE

  6. 4. Optimization of LDMOS Transistor in Power Amplifiers for Communication Systems

    Author : Ahsan-Ullah Kashif; Qamar-ul Wahab; Christer Svensson; Joachim Wurfl; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; RF-LDMOS; power amplifiers; technology CAD; load-pull; non-linear analysis; and switching analysis; Semiconductor physics; Halvledarfysik;

    Abstract : The emergence of new communication standards has put a key challenge for semiconductor industry to develop RF devices that can handle high power and high data rates simultaneously. The RF devices play a key role in the design of power amplifiers (PAs), which is considered as a heart of base-station. READ MORE

  7. 5. Design and Implementation of RF Kickers in MAX IV

    Author : David Olsson; Lunds universitet; []
    Keywords : Accelerator cavities; Beam choppers; Bunch-by-bunch feedback; RF kickers; Striplines;

    Abstract : The MAX IV facility in Lund, Sweden, consists of two storage rings for production of synchrotron radiation, and a full-energy LINAC for top-up injections. The LINAC also delivers short high-intensity electron bunches to a short pulse facility. READ MORE