Search for dissertations about: "semiconductor PHYSICS THESIS"
Showing result 16 - 20 of 308 swedish dissertations containing the words semiconductor PHYSICS THESIS.
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16. Resonant Tunneling in Laterally Confined Quantum Structures
Abstract : In the thesis, three-dimensionally confined resonant tunneling structures were studied experimentally. Two approaches were used for obtaining quantum confinement: gate-defined lateral constriction of double barrier structures, and epitaxial growth of self-assembled quantum dots. READ MORE
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17. Effect of Substrate on Bottom-Up Fabrication and Electronic Properties of Graphene Nanoribbons
Abstract : Taking into account the technological demand for the controlled preparation of atomically precise graphene nanoribbons (GNRs) with well-defined properties, the present thesis is focused on the investigation of the role of the underlying metal substrate in the process of building GNRs using bottom-up strategy and on the changes in the electronic structure of GNRs induced by the GNR-metal interaction. The combination of surface sensitive synchrotron-radiation-based spectroscopic techniques and scanning tunneling microscopy with in situ sample preparation allowed to trace evolution of the structural and electronic properties of the investigated systems. READ MORE
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18. Three-Dimensional Metal-Semiconductor Heterostructures for Device Applications
Abstract : Fabrication and characterisation of buried metal contacts in compound semiconductors are demonstrated. The contacts have been investigated due to their usage both as gates in transistors and as active or passive elements in novel devices. READ MORE
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19. Initial stages of metal- and organic-semiconductor interface formation
Abstract : This licentiate thesis deals with the electronic and geometrical properties of metal-semiconductor and organic-semiconductor interfaces investigated by photoelectron spectroscopy and scanning tunneling microscopy. First in line is the Co-InAs interface (metal-semiconductor) where it is found that Co is reactive and upon adsorption and thermal treatment it alloys with the indium of the substrate to form metallic islands, about 20 nm in diameter. READ MORE
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20. Semiconductor Nanoelectronic Devices Based on Ballistic and Quantum Effects
Abstract : As current silicon-based microelectronic devices and circuits are approaching their fundamental limits, the research field of nanoelectronics is emerging worldwide. With this background, the present thesis focuses on semiconductor nanoelectronic devices based on ballistic and quantum effects. The main material studied was a modulation doped In0. READ MORE