Search for dissertations about: "semiconductor p-type"
Showing result 1 - 5 of 45 swedish dissertations containing the words semiconductor p-type.
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1. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping
Abstract : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. READ MORE
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2. P-type and polarization doping of GaN in hot-wall MOCVD
Abstract : The devolopment of group-III nitride semiconductor technology continues to expand rapidly over the last two decades. The indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with a wide bandgap range, spanning from infrared(IR) to deep-ultraviolet (UV), enabling their utilization in optoelectronic industry. READ MORE
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3. The study of organic dyes for p-type dye-sensitized solar cells
Abstract : This thesis concerns the study of D–π–A type dyes as sensitizers for NiO-based p-type dye-sensitized solar cells. The focus has been on the design and synthesis of efficient dyes and the identification of parameters limiting the solar cell performance. READ MORE
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4. Fabrication and Characterization of Zinc Oxide Nanostructures for Piezoelectric, Mechanical and Electrical Applications
Abstract : Nanotechnology, the science of manipulating materials on an atomic or molecular scale is one of the fastest growing areas of research and technology. Nanotechnology has a vast range of applications in medicine, electronics, biomaterials and energy production. New developments in nanotechnology are growing all the time. READ MORE
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5. Metall organic vapour phase epitaxy for advanced III-V devices
Abstract : Metalorganic vapour phase epitaxy (MOVPE) has proven to be a successful method for growth of structures for advanced optoelectronic semiconductor devices in III-V compounds. This thesis deals with technological and process related aspects of MOVPE from an experimental perspective. READ MORE