Search for dissertations about: "stacking fault"
Showing result 1 - 5 of 42 swedish dissertations containing the words stacking fault.
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1. Generalised stacking fault energy and plastic deformation of austenitic stainless steels
Abstract : Austenitic stainless steels are primarily known for their exceptional corrosion resistance. They have the face centred cubic (FCC) structure which is stabilised by adding nickel to the Fe-Cr alloy. The Fe-Cr-Ni system can be further extended by adding other elements such as Mn, Mo, N, C, etc. in order to improve the properties. READ MORE
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2. Stacking fault energy and deformation behaviour of austenitic stainless steels: a joint theoretical-experimental study
Abstract : Austenitiska rostfria stål är främst kända för sin exceptionella korrosionsbeständighet. De har en ytcentrerad kubisk (FCC) struktur som stabiliseras genom att nickel, mangan eller kväve tillsätts till Fe-Cr legeringen. Fe-Cr-Ni-systemet kan utökas ytterligare genom tillsats av andra element såsom Mo, Cu, Ti, C, etc. READ MORE
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3. Active and passive seismic methods for investigating the glacially-triggered Burträsk fault
Abstract : Glacially-triggered faults are of high scientific interest since their formation was likely accompanied by major earthquakes and they are still a centre of seismicity in northern Fennoscandia, today. Imaging their deeper structure mainly relies on reflection seismics since the method generally has the best resolving power at depth of all geophysical methods. READ MORE
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4. Stacking Faults in Silicon Carbide
Abstract : This PhD thesis comprises a series of theoretical studies on various stacking faults in silicon carbide polytypes, based on first-principles density functional modelling, which lead to a detailed insight into general electronic properties of stacking disordered system. This work is largely motivated by the discovery in 1999 by ABB Corporate Research of the electronic degradation phenomenon in 4H-SiC p-i-n diodes. READ MORE
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5. GaN, AlGaN, GaNAs and Related Heterostructures Grown by Molecular Beam Epitaxy
Abstract : This work deals with growth and characterization of III-nitrides and related heterostructures as well as GaNAs alloys grown by plasma assisted molecular beam epitaxy (MBE). The III-nitrides belong to the wide bandgap semiconductors due to their large energy bandgap spanning from 1.9 to 6.2 eV. READ MORE