Search for dissertations about: "tantalum oxide"

Showing result 1 - 5 of 12 swedish dissertations containing the words tantalum oxide.

  2. 1. CVD and ALD of Group IV- and V-Oxides for Dielectric Applications

    Author : Katarina Forsgren; Steven George; Uppsala universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Chemistry; CVD; ALD; Dielectric constant; Tantalum oxide; Ta2O5; Zirconium oxide; ZrO2; Hafnium oxide; HfO2; QCM; Kemi; Chemistry; Kemi; Inorganic Chemistry; oorganisk kemi;

    Abstract : Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and hafnium oxide, HfO2. READ MORE

  4. 2. Employing Metal Iodides and Oxygen in ALD and CVD of Functional Metal Oxides

    Author : Jonas Sundqvist; Anders Hårsta; Roy Gordon; Uppsala universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Inorganic chemistry; CVD; ALD; tantalum oxide; hafnium oxide; tin oxide; epitaxy; Ta2O5; HfO2; SnO2; XRD; Oorganisk kemi; Inorganic chemistry; Oorganisk kemi; Inorganic Chemistry; Oorganisk kemi;

    Abstract : Many materials exhibit interesting and novel properties when prepared as thin films. Thin film metal oxides have had an impact on the technological progress of the microelectronics mainly due to their electrical and optical properties. READ MORE

  5. 3. Electrochromic Properties of Iridium Oxide Based Thin Films

    Author : Jonas Backholm; Gunnar A. Niklasson; Andris Azens; Franco Decker; Uppsala universitet; []
    Keywords : Engineering physics; Electrochromism; iridium oxide; hydrogen intercalation; chemical diffusion coefficient; density of states; optical modulation; Teknisk fysik;

    Abstract : Electrochromic iridium oxide (IrOx) and iridium-tantalum oxide (IrTaOx) thin films were prepared by reactive magnetron sputtering. Composition, density, and structure were determined using Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. READ MORE

  6. 4. Investigation of Novel Metal Gate and High-κ Dielectric Materials for CMOS Technologies

    Author : Jörgen Westlinder; Jörgen Olsson; Stefan Bengtsson; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; metal gate; high-κ dielectics; titanium nitride; zirconium nitride; MOSFET; thin film; tantalum oxide; aluminum nitride; Elektronik; Electronics; Elektronik;

    Abstract : The demands for faster, smaller, and less expensive electronic equipments are basically the driving forces for improving the speed and increasing the packing density of microelectronic components. Down-scaling of the devices is the principal method to realize these requests. READ MORE

  7. 5. The structural chemistry of niobium and tantalum oxide fluorides containing divalent lead

    Author : Örjan Sävborg; Stockholms universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : The coordination about divalent lead in oxides and fluorides if reviewed with special reference to the stereochemical activity of the lone pair. An attempt has been made to identify fluorine atoms by using bond strength calculations. READ MORE