Search for dissertations about: "threading dislocation"

Showing result 1 - 5 of 15 swedish dissertations containing the words threading dislocation.

  2. 1. Optimization of Metamorphic Materials on GaAs Grown by MBE

    Author : Yuxin Song; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; heterostructures; alloy graded buffer; GaAs; molecular beam epitaxy; metamorphic; threading dislocation; InGaAs;

    Abstract : Advanced epitaxial technologies such as molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) have enabled the idea of semiconductor heterostructures, which built up the foundation of the fast developing information and communication technology nowadays. Lattice mismatch has been a problem limiting designs of semiconductor heterostructures. READ MORE

  4. 2. Novel Materials and Technologies for IR Optoelectronic Applications

    Author : Yuxin Song; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; GaSbBi; dilute bismide; InAs GaSb type-II superlattice; metamorphic; InSbBi; alloy graded buffer; threading dislocation; infrared; molecular beam epitaxy;

    Abstract : This thesis focuses on novel III-V materials (InAs/GaSb type-II superlattices, T2SL, and dilute bismides) and metamorphic growth techniques for infrared optoelectronics all of which may find wide spread applications in telecommunication, energy harvesting and saving, sensing and imaging. Mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) photodetectors at the atmospheric windows of 3-5 and 8-12 µm, respectively, are currently dominated by HgCdTe and quantum well infrared photodetectors. READ MORE

  5. 3. Optical and Structural Characterization of GaN Based Hybrid Structures and Nanorods

    Author : Mathias Forsberg; Galia Pozina; Ching-Lien Hsiao; Oleksandr Plashkevych; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : GaN belongs to the group III nitrides and is today the material of choice for efficient blue light emission, enabling solid state white lighting by combining red, blue and green light emitting diodes (LED) or by having a blue LED illuminating a phosphor. By combining GaN quantum well (QW) structures with colloids, nanoparticles or polyfluorene films, LEDs may be fabricate at lower cost. READ MORE

  6. 4. Magnetron Sputter Epitaxy of GaN

    Author : Muhammad Junaid; Jens Birch; Lars Hultman; Vanya Darakchieva; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Electronic-grade GaN (0001) epilayers have been grown directly on Al2O3 (0001) substrates by reactive DC-magnetron sputter epitaxy (MSE) from a liquid Ga sputtering target in an Ar/N2 atmosphere. The as-grown GaN epitaxial film exhibit low threading dislocation density on the order of ≤ 1010 cm-2 obtained by transmission electron microscopy and modified Williamson-Hall plot. READ MORE

  7. 5. Growth, characterization and processing of III-nitride semiconductors

    Author : Fredrik Fälth; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : The III-nitride semiconductor materials have wide direct bandgap ranging from 6.2 eV (AlN); through 3.4 eV (GaN) to 0.65 eV (InN). READ MORE