Search for dissertations about: "2D graphene"

Showing result 11 - 15 of 48 swedish dissertations containing the words 2D graphene.

2. 11. Influence of defects and impurities on the properties of 2D materials

   Author : Soumyajyoti Haldar; Biplab Sanyal; Olle Eriksson; Torbjörn Björkman; Uppsala universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; 2D Materials; Defects on 2D materials; Impurities on 2D materials; Physics with spec. in Atomic; Molecular and Condensed Matter Physics; Fysik med inriktning mot atom- molekyl- och kondenserande materiens fysik;

   Abstract : Graphene, the thinnest material with a stable 2D structure, is a potential alternative for silicon-based electronics. However, zero band gap of graphene causes a poor on-off ratio of current thus making it unsuitable for logic operations. This problem prompted scientists to find other suitable 2D materials. READ MORE

4. 12. Simple Models for Complex Nonequilibrium Problems in Nanoscale Friction and Network Dynamics

   Author : David Andersson; Astrid de WIjn; Supriya Krishnamurthy; Nicola Manini; Stockholms universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SAMHÄLLSVETENSKAP; SOCIAL SCIENCES; tribology; nanofriction; 2d materials; graphene; image reconstruction; social dynamics; common-pool resource; collective action; simple models; teoretisk fysik; Theoretical Physics;

   Abstract : This doctoral thesis investigates three different topics: How friction evolves in atomically thin layered materials (2D materials); How social dynamics can be used to model grand scale common-pool resource games; Benchmarking of various image reconstruction algorithms in atomic force microscopy experiments. While these topics are diverse, they share being complex out-of-equilibrium systems. READ MORE

5. 13. Effects of impurities on charge transport in graphene field-effect transistors

   Author : Marlene Bonmann; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; carrier transport; electron and hole mobility; impurities; traps; graphene; field-effect transistors; microwave devices; saturation velocity; remote phonons;

   Abstract : In order to push the upper frequency limit of high speed electronics further, thereby extending the range of applications, new device technologies and materials are continuously investigated. The 2D material graphene, with its intrinsically extremely high room temperature charge carrier velocity, is regarded as a promising candidate to push the frequency limit even further. READ MORE

6. 14. Graphene field-effect transistors and devices for advanced high-frequency applications

   Author : Marlene Bonmann; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; traps; graphene; self-heating; field-effect transistors; remote phonons; carrier transport; saturation velocity; microwave devices; impurities and defects;

   Abstract : New device technologies and materials are continuously investigated, in order to increase the bandwidth of high-speed electronics, thereby extending data rate and range of applications. The 2D-material graphene, with its intrinsically extremely high charge carrier velocity, is considered as a promising new channel material for advanced high frequency field-effect transistors. READ MORE

7. 15. Graphene spin circuits and spin-orbit phenomena in van der Waals heterostructures with topological insulators

   Author : Dmitrii Khokhriakov; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Graphene; Spin-charge conversion; Topological insulator; Spintronics; Proximity effect; Van der Waals heterostructures;

   Abstract : Spintronics offers an alternative approach to conventional charge-based information processing by using the electron spin for next-generation non-volatile memory and logic technologies. To realize such technologies, it is necessary to develop spin-polarized current sources, spin interconnects, charge-to-spin conversion processes, and gate-tunable spintronic functionalities. READ MORE