Search for dissertations about: "2DEG mobility"
Showing result 1 - 5 of 15 swedish dissertations containing the words 2DEG mobility.
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1. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures
Abstract : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. READ MORE
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2. InP-based heterostructure field effect transistors and millimeter wave integrated circuits
Abstract : .... READ MORE
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3. Charge carrier transport in field-effect transistors with two-dimensional electron gas channels studied using geometrical magnetoresistance effect
Abstract : During the last decades, significant efforts have been made to exploit the excellent and promising electronic properties exhibited by field-effect transistors (FETs) with two-dimensional electron gas (2DEG) channels. The most prominent representatives of this class of devices are high-electron-mobility transistors (HEMTs) and graphene field-effect transistors (GFETs). READ MORE
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4. Electron Transport in Low Dimensional Systems
Abstract : This thesis consists of experimental studies of transport properties in high mobility two dimensional electron gases (2DEGs). Two material systems are used, an AlGaAs/GaAs heterojunction and a GaInAs/InP quantum well. READ MORE
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5. MOCVD growth of GaN-based high electron mobility transistor structures
Abstract : The present work was to improve the overall quality of GaN-based high electron mobility transistor (HEMT) epitaxial structures grown on semi-insulating (SI) SiC and native GaN substrates, using an approach called bottom-to-top optimization. The bottom-to-top optimization means an entire growth process optimization, from in-situ substrate pretreatment to the epitaxial growth and then the cooling process. READ MORE