Search for dissertations about: "3D integrated circuits"

Showing result 1 - 5 of 17 swedish dissertations containing the words 3D integrated circuits.

  1. 1. Track circuits’ robustness : Modeling, measurement and simulation

    Author : Emilio Rodriguez; Luleå tekniska universitet; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Track circuit; Relay; False positive signals; Signalling in railway; Modelling; Simulation; Testing; Robustness; Interoperability; Reliability; Railway Infrastructure; Drift och underhållsteknik; Operation and Maintenance;

    Abstract : In countries with rough weather conditions, frequent delays cause railway companies to waste time and money. Many of these delays are related to the train detection systems, as the old DC track circuits are still used in some countries, including Sweden, our case study. READ MORE

  2. 2. Contacts and Interconnects for Germanium-based Monolithic 3D Integrated Circuits

    Author : Lukas Jablonka; Zhen Zhang; Shi-Li Zhang; Fabrice Nemouchi; Uppsala universitet; []
    Keywords : Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Abstract : Three-dimensional integrated circuits have great potential for further increasing the number of transistors per area by stacking several device tiers on top of each other and without the need to continue the evermore complicated and expensive down-scaling of transistor dimensions. Among the different approaches towards the realization of such circuits, the monolithic approach, i. READ MORE

  3. 3. Germanium layer transfer and device fabrication for monolithic 3D integration

    Author : Ahmad Abedin; Mikael Östling; Cor Claeys; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Monolithic; sequential; 3D; silicon; germanium; wafer bonding; etch back; germanium on insulator; GOI; Ge pFET; low temperature; Sipassivation; pn junction; Kisel; germanium; epitaxi; selektiv; pn-övergång; germanium påisolator; GOI; Ge PFET; bonding; monolitisk; sekventiell; tre dimensionell; 3D; lågtemperarad;

    Abstract : Monolithic three-dimensional (M3D) integration, it has been proposed,can overcome the limitations of further circuits’ performance improvementand functionality expansion. The emergence of the internet of things (IoT) isdriving the semiconductor industry toward the fabrication of higher-performancecircuits with diverse functionality. READ MORE

  4. 4. Applications of Si1-xGex alloys for Ge devices and monolithic 3D integration

    Author : Konstantinos Garidis; Per-Erik Hellström; Mikael Östling; Sten Vollebregt; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon; germanium; epitaxy; selective; pn junction; germanium on insulator; GOI; Ge PFET; bonding; monolithic; sequential; three dimensional; 3D; low temperature; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : As the semiconductor industry moves beyond the 10 nm node, power consumption constraints and reduction of the negative impact of parasitic elements become important. Silicon germanium (Si1−xGex) alloys have been used to amplify the performance of Si based devices and integrated circuits (ICs) for decades. READ MORE

  5. 5. InAs Nanowire Devices and Circuits

    Author : Kristofer Jansson; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Modelling; Circuit; Simulation; Ballistic; Capacitor; Transistor; RF; Band structure; III-V semiconductor; InAs; MOSFET; Metal-oxide-semiconductor field-effect transistor; Nanowire; Amplifier;

    Abstract : Since the introduction of the transistor and the integrated circuit, the semiconductor industry has developed at a remarkable pace. By continuously fabricating smaller and faster transistors, it has been possible to maintain an exponential increase in performance, a phenomenon famously described by Moore’s Law. READ MORE