Search for dissertations about: "3D integrated circuits"

Showing result 11 - 15 of 18 swedish dissertations containing the words 3D integrated circuits.

2. 11. Designer magnetoplasmonics for adaptive nano-optics

   Author : Irina Zubritskaya; Göteborgs universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; Photonics; magnetoplasmonics; magneto-optics; magneto-optical Kerr effect MOKE ; plasmon ruler; nickel; cobalt; gold; silicon; localized surface plasmon resonance; dimer; trimer; chiroptics; chiral transmission; 2D nanoantennas; dynamic tuning; metal-dielectric; 3D nanoantennas; metasurface; magnetic modulation; perpendicular magnetic anisotropy.;

   Abstract : Materials that provide real-time control of the fundamental properties of light at visible and near-infrared frequencies enable the essential components for future optical devices. Metal nanostructures that couple electromagnetic (EM) radiation on a sub-wavelength length scale to free electrons, forming propagating or localized surface plasmons, provide many exciting functionalities due to their ability to manipulate light via the local EM field shaping and enhancement. READ MORE

4. 12. Photonic terahertz-wave generation, radiation and quasioptical integration

   Author : Biddut Kumar Banik; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; semiconductor device modelling; semiconductor diodes; III-V semiconductors; Catadioptric lens; imaging; dipole antennas; slot antennas; lens antennas; semiconductor heterojunctions; dielectric loaded antennas; optical mixers; photomixers; near-field imaging; computer aided engineering; indium compounds; millimetre wave imaging; near-field optics; submillimeter wave generation; photodiodes; terahertz sources; millimetre wave generation; submillimetre wave integrated circuits; microwave imaging; uni-travelling-carrier photodiodes;

   Abstract : This thesis deals with the uni-travelling-carrier photodiode (UTC-PD) based photonic generation of terahertz waves, antenna designs for the terahertz radiation and a novelcatadioptric lens for quasioptical integration.The ongoing and accomplished research work on the UTC-PD, its limitations and optimisation scopes for attaining higher bandwidth and higher output power have been discussed. READ MORE

5. 13. Fundamental Characterization of Low Dimensional Carbon Nanomaterials for 3D Electronics Packaging

   Author : Andreas Nylander; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Reliability aspects; Graphene; Thermal management; Carbon nanotubes; Electrical interconnects. Thermal interface material; Heat treatment.;

   Abstract : Transistor miniaturization has over the last half century paved the way for higher value electronics every year along an exponential pace known as 'Moore's law'. Now, as the industry is reaching transistor features that no longer makes economic sense, this way of developing integrated circuits (ICs) is coming to its definitive end. READ MORE

6. 14. Silicon nanowire based devices for More than Moore Applications

   Author : Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
   Keywords : silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

   Abstract : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE

7. 15. Exploring the Scalability and Performance of Networks-on-Chip with Deflection Routing in 3D Many-core Architecture

   Author : Awet Yemane Weldezion; Hannu Tenhunen; Lirong Zheng; Tapani Ahonen; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Alpha-model; Average distance; B-Model; NoC; Zero-load predictive model; deflection routing; q-routing;

   Abstract : Three-Dimensional (3D) integration of circuits based on die and wafer stacking using through-silicon-via is a critical technology in enabling "more-than-Moore", i.e. functional integration of devices beyond pure scaling ("more Moore"). READ MORE