Search for dissertations about: "4h"

Showing result 1 - 5 of 125 swedish dissertations containing the word 4h.

  2. 1. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

    Author : Hossein Elahipanah; Mikael Östling; Carl-Mikael Zetterling; Anders Hallèn; Adolf Schöner; Tsunenobu Kimoto; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington; Electrical Engineering; Elektro- och systemteknik; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. READ MORE

  4. 2. Carrieer transport in 4H-SiC

    Author : Antonio Martinez; KTH; []
    Keywords : ;

    Abstract : .... READ MORE

  5. 3. Electrical contacts, Ohmic and Schottky, to 4H-Silicon Carbide for device applications

    Author : Sang-Kwon Lee; KTH; []
    Keywords : silicon carbice; Ohmic; Schottky contacts; co-evaporation; current-voltage; capacitance-voltage measurement; power device; 4H-SiC; TLM;

    Abstract : .... READ MORE

  6. 4. Electrically active defects in 4H silicon carbide

    Author : Liutauras Storasta; Tsunenobu Kimoto; Linköpings universitet; []
    Keywords : ;

    Abstract : Development of future technology needs to widen the application areas of semiconductor devices. The increased requirements are beyond the limits of the most common semiconductors today like silicon or gallium arsenide. Use of new materials could resolve many performance issues and also offer increased reliability and reduced cost of the devices. READ MORE

  7. 5. Radiation Hardness of 4H-SiC Devices and Circuits

    Author : Sethu Saveda Suvanam; Anders Hallén; Carl-Mikael Zetterling; Ulrike Grossner; KTH; []
    Keywords : Silicon carbide; radiation hardness; protons; gamma radiation; bipolar junction transistors; aluminium oxide; surface recombination.; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Advances in space and nuclear technologies are limited by the capabilities of the conventional silicon (Si) electronics. Hence, there is a need to explore materials beyond Si with enhanced properties to operate in extreme environments. In this regards, silicon carbide (4H-SiC), a wide bandgap semiconductor, provides suitable solutions. READ MORE