Search for dissertations about: "ALD"

Showing result 1 - 5 of 51 swedish dissertations containing the word ALD.

  1. 1. CVD and ALD in the Bi-Ti-O system

    Author : Mikael Schuisky; Uppsala universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP; Chemistry; Halide-CVD; ALD; Bismuth titanate; Bi4Ti3O12; Titanium oxide; TiO2; Bismuth oxide; Bi2O2.33; Epitaxy; QCM.; Kemi; Chemistry; Kemi; Inorganic Chemistry; oorganisk kemi;

    Abstract : Bismuth titanate Bi4Ti3O12, is one of the bismuth based layered ferroelectric materials that is a candidate for replacing the lead based ferroelectric materials in for instance non-volatile ferroelectric random access memories (FRAM). This is due to the fact that the bismuth based ferroelectrics consists of pseudo perovskite units sandwiched in between bismuth oxide layers, which gives them a better fatigue nature. READ MORE

  2. 2. CVD and ALD of Group IV- and V-Oxides for Dielectric Applications

    Author : Katarina Forsgren; Steven George; Uppsala universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP; Chemistry; CVD; ALD; Dielectric constant; Tantalum oxide; Ta2O5; Zirconium oxide; ZrO2; Hafnium oxide; HfO2; QCM; Kemi; Chemistry; Kemi; Inorganic Chemistry; oorganisk kemi;

    Abstract : Due to the constantly decreasing dimensions of electronic devices, the conventional dielectric material in transistors and capacitors, SiO2, has to be replaced by a material with higher dielectric constant. Some of the most promising candidates are tantalum oxide,Ta2O5, zirconium oxide, ZrO2 and hafnium oxide, HfO2. READ MORE

  3. 3. Employing Metal Iodides and Oxygen in ALD and CVD of Functional Metal Oxides

    Author : Jonas Sundqvist; Anders Hårsta; Roy Gordon; Uppsala universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP; NATURVETENSKAP; NATURAL SCIENCES; Inorganic chemistry; CVD; ALD; tantalum oxide; hafnium oxide; tin oxide; epitaxy; Ta2O5; HfO2; SnO2; XRD; Oorganisk kemi; Inorganic chemistry; Oorganisk kemi; Inorganic Chemistry; Oorganisk kemi;

    Abstract : Many materials exhibit interesting and novel properties when prepared as thin films. Thin film metal oxides have had an impact on the technological progress of the microelectronics mainly due to their electrical and optical properties. READ MORE

  4. 4. ALD Buffer Layer Growth and Interface Formation on Cu(In,Ga)Se2 Solar Cell Absorbers

    Author : Jan Sterner; Lars Stolt; Roland Scheer; Uppsala universitet; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; thin film; Cu In; Ga Se2; CIGS; chalcopyrite; ALD; sulfurization; buffer layer; XPS; UPS; electron spectroscopy; band alignment; atomic layer deposition; Elektronik; Electronics; Elektronik;

    Abstract : Cu(In,Ga)Se2 (CIGS) thin film solar cells contain a thin layer of CdS. To avoid toxic heavy-metal-containing waste in the module production the development of a cadmium-free buffer layer is desirable. This thesis considers alternative Cd-free buffer materials deposited by Atomic Layer Deposition (ALD). READ MORE

  5. 5. Window Layer Structures for Chalcopyrite Thin-Film Solar Cells

    Author : Fredrik Larsson; Tobias Törndahl; Jan Keller; Marika Edoff; Daniel Lincot; Uppsala universitet; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ENGINEERING AND TECHNOLOGY; CIGS; atomic layer deposition; ALD; thin-film technology; window layer structures; buffer layers; front contacts; metal oxides; ternary compounds; CIGS; tunnfilmssolceller; ALD; tunnfilmsteknik; fönsterlager; buffertlager; framkontakter; metalloxider; ternära föreningar; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Abstract : This thesis aims to contribute to the development of improved window layer structures for chalcopyrite thin-film solar cells, with an emphasis on the buffer layer, to assist future reductions of the levelized cost of energy. This is realized by exploring the potential of existing materials and deposition processes, as well as developing new buffer layer processes based on atomic layer deposition (ALD). READ MORE