Search for dissertations about: "ALD"
Showing result 6 - 10 of 57 swedish dissertations containing the word ALD.
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6. Thin Film Synthesis of Nickel Containing Compounds
Abstract : Most electrical, magnetic or optical devices are today based on several, usually extremely thin layers of different materials. In this thesis chemical synthesis processes have been developed for growth of less stable and metastable layers, and even multilayers, of nickel containing compounds. READ MORE
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7. Atomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide Substrates
Abstract : Thin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. READ MORE
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8. Novel concepts for advanced CMOS : Materials, process and device architecture
Abstract : The continuous and aggressive dimensional miniaturization ofthe conventional complementary-metal-oxide semiconductor (CMOS)architecture has been the main impetus for the vast growth ofIC industry over the past decades. As the CMOS downscalingapproaches the fundamental limits, unconventional materials andnovel device architectures are required in order to guaranteethe ultimate scaling in device dimensions and maintain theperformance gain expected from the scaling. READ MORE
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9. Ultra-Low Noise InP HEMTs for Cryogenic Amplification
Abstract : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. READ MORE
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10. Integration of thulium silicate for enhanced scalability of high-k/metal gate CMOS technology
Abstract : High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. READ MORE