Search for dissertations about: "Al2O3 TiC"
Showing result 1 - 5 of 8 swedish dissertations containing the words Al2O3 TiC.
-
1. Microstructure of Alumina (Al2O3) Grown by Oxidation of FeCrAl Alloys and by Chemical Vapour Deposition
Abstract : This thesis consists of two parts: the detailed microstructure of (i) CVD alumina multilayer coatings, and (ii) alumina scales formed on three different FeCrAl alloys. The coatings and oxide scales were characterized by using analytical electron microscopy and different surface analysis techniques. READ MORE
-
2. Metastable Alumina from Theory: Bulk, Surface, and Growth of κ-Al2O3
Abstract : Aluminas are materials of high technological importance that show a fascinating structural flexibility, with a large amount of different phases (alpha, gamma, eta, delta, kappa, chi, ...) and phase transitions at relatively high temperatures. READ MORE
-
3. Structure of thin-film oxides: an ab initio study of TiC/Alumina
Abstract : Oxides and oxide films play a major role in present-daytechnologies. Identification and analysis of their atomic andelectronic structure are important to develop new functionalmaterials. READ MORE
-
4. Multifunctional nanostructured Ti-Si-C thin films
Abstract : In this Thesis, I have investigated multifunctional nanostructured Ti-Si-C thin films synthesized by magnetron sputtering in the substrate-temperature range from room temperature to 900 °C. The studies cover high-temperature growth of Ti3SiC2 and Ti4SiC3, low-temperature growth of Ti-Si-C nanocomposites, and Ti-Si-C-based multi¬layers, as well as their electrical, mechanical, and thermal-stability properties. READ MORE
-
5. Thin film growth and characterization of Ti-(Si,Ge)-C compounds
Abstract : This thesis describes growth by de magnetron sputtering of thin film Ti-Si-C and Ti-Ge-C materials, with an emphasis on the deposition conditions for nanocomposite and epitaxial growth at low and high temperature processing, respectively. In the Ti-Si-C materials system, I have synthesized nanocomposite thin films from a Ti3SiC2 compound target in an Ar discharge on Si(100), Al2O3(0001), and Al substrates at low substrate temperature (300 oC and below). READ MORE