Search for dissertations about: "AlGaN GaN"
Showing result 1 - 5 of 49 swedish dissertations containing the words AlGaN GaN.
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1. Processing, Characterization and Modeling of AlGaN/GaN HEMTs
Abstract : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). READ MORE
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2. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures
Abstract : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. READ MORE
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3. Molecular Beam Epitaxy and Characterisation of GaN-compounds on GaAs(001) and Sapphire(0001)
Abstract : The hexagonal (wurtzite) and the cubic (zinc blende) group-III nitrides and their heterostructures have attracted much attention due to their potential for applications in high-power, high-frequency electronic and optoelectronic devices. The optical emission range of the GaN-based alloys cover the whole visible range from near infrared (IR) to ultraviolet (UV). READ MORE
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4. Initial growth of GaN on sapphire and growth of AlGaN on GaN by molecular beam epitaxy
Abstract : .... READ MORE
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5. Ultraviolet vertical-cavity surface-emitting lasers and vertical microcavities for blue lasers
Abstract : III-nitride materials are used for ultraviolet (UV) and visible light emitters. One such light source is the vertical-cavity surface-emitting laser (VCSEL) that could find applications within areas ranging from sterilization and medical treatment to car headlights and augmented reality displays. READ MORE