Search for dissertations about: "AlGaN"

Showing result 1 - 5 of 34 swedish dissertations containing the word AlGaN.

  1. 1. Towards Novel AlGaN-Based Light Emitters

    Author : Martin Stattin; [2011]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlGaN; light emitting diode; deep ultraviolet; III-Nitrides; near infrared; quantum cascade laser;

    Abstract : The unique properties of the AlGaN semiconductors make them a suitable choice for optoelectronic devices at both short and long wavelengths, based on interband and intersubband transitions, respectively. What sets AlGaN apart from other wide-bandgap semiconductors is the possibility to obtain both p- and n-type conductivity as well as the direct bandgap. READ MORE

  2. 2. Elements of AlGaN-Based Light Emitters

    Author : Martin Stattin; [2013]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; graphene; vertical cavity surface emitting laser; deep-ultraviolet; III-nitride; near-infrared; light emitting diode; visible; AlGaN; quantum cascade laser;

    Abstract : The III-nitrides have enabled a range of optoelectronic devices and associated applications of great industrial and societal importance. However, the full potential of the III-nitrides remains to be explored. READ MORE

  3. 3. Cathodoluminescence Studies of Quantum Structures and III-V nitrides

    Author : Anders Petersson; Lund University.; Lunds universitet.; [1998]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; AlGaN; Fysik; Physics; GaN-AlGaN; single dot spectroscopy; InP-GaInP; Stranski Krastanow; quantum dots; quantum wires; low-dimensional structures; InAs-GaAs; III-V nitride; Cathodoluminescence; III-V semiconductors; Fysicumarkivet A:1999:Petersson;

    Abstract : Characterization of low-dimensional semiconductor structures is a challenging task. The thesis is based on experiments, using cathodoluminescence (CL) as a tool for characterization. The high spatial resolution and the possibility of spectroscopy of small structures make CL one of the most powerful techniques for these types of investigations. READ MORE

  4. 4. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

    Author : Stefan Davidsson; [2005]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; two-dimensional electron gas; MBE; Al2< sub>O3< sub>; epitaxial growth; III-nitride; molecular beam epitaxy; GaN; nucleation layer; nitridation; AlGaN; HFET; 2DEG density; AlN; 2DEG; buffer layer; sapphire; 2DEG mobility; heterostructure field effect transistor;

    Abstract : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. READ MORE

  5. 5. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Author : Vincent Desmaris; [2006]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Abstract : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). READ MORE