Search for dissertations about: "AlGaN"

Showing result 21 - 25 of 51 swedish dissertations containing the word AlGaN.

2. 21. Characterization of Microwave Transistors for Robust Receivers and High Efficiency Transmitters

   Author : Mattias Thorsell; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; noise modeling; access resistance; self-heating; AlGaN GaN HEMT; thermal characterization; active load-pull; load modulation;

   Abstract : The next generation of integrated transceiver front-ends needs both robustlow noise amplifiers and high power amplifiers on a single-chip. The AluminiumGallium Nitride / Gallium Nitride (AlGaN/GaN) High Electron MobilityTransistors (HEMT) is a suitable semiconductor technology for this purposedue to its high breakdown voltage and high electron mobility. READ MORE

4. 22. Nonlinear Characterisation and Modelling of Microwave Semiconductor Devices

   Author : Mattias Thorsell; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; noise modelling; nonlinear measurement; active load-pull; noise measurement; thermal characterisation; AlGaN GaN HEMT; nonlinear modelling;

   Abstract : There is an increasing need for more accurate models taking into account the nonlinearities and memory effects of microwave transistors. The memory effects are especially important for transistor technologies suffering from relatively large low frequency dispersion, such as GaN baed HEMTs. READ MORE

5. 23. Buffer Related Dispersive Effects in Microwave GaN HEMTs

   Author : Johan Bergsten; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; trapping effects; C-doping; AlGaN GaN interface quality; recessed ohmic contacts; GaN HEMT; buffer design;

   Abstract : In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. READ MORE

6. 24. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping

   Author : Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zlatko Sitar; Linköpings universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Hot-wall MOCVD; III-nitrides; p-type GaN; HEMTs; Linearity; High-Al barrier;

   Abstract : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. READ MORE

7. 25. Advanced Heterostructure Designs and Recessed Ohmic Contacts for III-Nitride-Based HEMTs

   Author : Johan Bergsten; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Abstract : Modern III-Nitride (III-N) heterostructures offer high mobility, high electron density, large breakdown voltages and good thermal capabilities. High electron mobility transistors (HEMT) based on III-Ns are therefore ideal for high frequency, high power amplification. The intended applications are within radar and mobile communication. READ MORE