Search for dissertations about: "AlInN"
Found 3 swedish dissertations containing the word AlInN.
-
1. Localization effects in ternary nitride semiconductors
Abstract : InGaN based blue and near-ultraviolet light emitting diodes and laser diodes have been successfully commercialized for many applications such as general lighting, display backlighting and high density optical storage devices. Despite having a comparably high defect density, these devices are known for their efficient operation, which is attributed to localization in potential fluctuations preventing carriers from reaching the centers of nonradiative recombination. READ MORE
-
2. Valence Electron Energy Loss Spectroscopy of III-Nitride Semiconductors
Abstract : This doctorate thesis covers both experimental and theoretical investigations of the optical responses of the group III-nitrides (AlN, GaN, InN) and their ternary alloys. The goal of this research has been to explore the usefulness of valence electron energy loss spectroscopy (VEELS) for materials characterization of group III-nitride semiconductors at the nanoscale. READ MORE
-
3. GaN HEMT Low Frequency Noise Characterization for Low Phase Noise Oscillator Design
Abstract : The thesis presents low frequency noise (LFN) characterization of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for low phase noise oscillator design. First, GaN HEMT technology is benchmarked versus other transistor technologies, e.g. READ MORE