Search for dissertations about: "AlInN"

Found 3 swedish dissertations containing the word AlInN.

  1. 1. Localization effects in ternary nitride semiconductors

    Author : Vytautas Liuolia; Saulius Marcinkevicius; Toshiharu Saiki; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; AlGaN; InGaN; AlInN; LEDs; near-field microscopy; carrier dynamics; alloy fluctuations; carrier localization; built-in electric field; nonpolar planes; polarized luminescence;

    Abstract : InGaN based blue and near-ultraviolet light emitting diodes and laser diodes have been successfully commercialized for many applications such as general lighting, display backlighting and high density optical storage devices. Despite having a comparably high defect density, these devices are known for their efficient operation, which is attributed to localization in potential fluctuations preventing carriers from reaching the centers of nonradiative recombination. READ MORE

  2. 2. Valence Electron Energy Loss Spectroscopy of III-Nitride Semiconductors

    University dissertation from Linköping : Linköping University Electronic Press

    Author : Justinas Pališaitis; Per Persson; Lars Hultman; Jens Birch; Vicki Keast; [2012]

    Abstract : This doctorate thesis covers both experimental and theoretical investigations of the optical responses of the group III-nitrides (AlN, GaN, InN) and their ternary alloys. The goal of this research has been to explore the usefulness of valence electron energy loss spectroscopy (VEELS) for materials characterization of group III-nitride semiconductors at the nanoscale. READ MORE

  3. 3. GaN HEMT Low Frequency Noise Characterization for Low Phase Noise Oscillator Design

    University dissertation from Linköping : Linköping University Electronic Press

    Author : Thi Ngoc Do Thanh; [2015]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low frequency noise; flicker noise; phase noise; deposition method.; oscillator; VCO; GaAs pHEMT; MMIC; GaN HEMT; passivation; InGaP HBT;

    Abstract : The thesis presents low frequency noise (LFN) characterization of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for low phase noise oscillator design. First, GaN HEMT technology is benchmarked versus other transistor technologies, e.g. READ MORE