Search for dissertations about: "AlN Gan HEMT"

Showing result 1 - 5 of 12 swedish dissertations containing the words AlN Gan HEMT.

  2. 1. Hot-wall MOCVD of N-polar group-III nitride materials and high electron mobility transistor structures

    Author : Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Fatemeh (Shadi) Shahedipour-Sandvik; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Nitrogen-polar; MOCVD; III-nitride; GaN; AlN; C-face SiC; HEMTs;

    Abstract : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). READ MORE

  4. 2. Advanced III-Nitride Technology for mm-Wave Applications

    Author : Anna Malmros; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ohmic contact; passivation; InAlN; high frequency performance; GaN; InAlGaN; HEMT; electron trapping;

    Abstract : Within wireless communication, there is a continuously growing need for more bandwidth due to an increasing number of users and data intense services. The development within sensor systems such as radars, is largely driven by the need for increased detection range and robustness. READ MORE

  5. 3. Buffer Related Dispersive Effects in Microwave GaN HEMTs

    Author : Johan Bergsten; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; trapping effects; C-doping; AlGaN GaN interface quality; recessed ohmic contacts; GaN HEMT; buffer design;

    Abstract : In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. READ MORE

  6. 4. GaN HEMT Low Frequency Noise Characterization for Low Phase Noise Oscillator Design

    Author : Thi Ngoc Do Thanh; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Low frequency noise; flicker noise; phase noise; deposition method.; oscillator; VCO; GaAs pHEMT; MMIC; GaN HEMT; passivation; InGaP HBT;

    Abstract : The thesis presents low frequency noise (LFN) characterization of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) for low phase noise oscillator design. First, GaN HEMT technology is benchmarked versus other transistor technologies, e.g. READ MORE

  7. 5. Optimization of Ohmic Contacts and Surface Passivation for ‘Buffer-Free’ GaN HEMT Technologies

    Author : Chen Ding Yuan; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; QuanFINE; passivation; GaN HEMT; pretreatment; ohmic contact;

    Abstract : Gallium nitride high electron mobility transistors (GaN HEMTs) draw attention from high frequency and high power industries due to unique properties including high electron mobility and saturation velocity combined with high breakdown voltage. This makes GaN HEMTs suitable for power devices with high switching speed and high frequency applications with high power density requirements. READ MORE