Search for dissertations about: "AlN Gan"

Showing result 1 - 5 of 40 swedish dissertations containing the words AlN Gan.

2. 1. GaN/AlN Multiple Quantum Well Structures

   Author : Xinju Liu; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; GaN; AlN; multiple quantum well; Molecular beam epitaxy; Si 111 ; intersubband transition; sapphire; GaN template;

   Abstract : The III-nitride semiconductors: InN, GaN and AlN are promising for photonic, high power and high temperature electronic devices. Their large and direct band gaps cover the range 0.7 to 6.2 eV, i. READ MORE

4. 2. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

   Author : Stefan Davidsson; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; two-dimensional electron gas; MBE; Al_{2< sub>O3< sub>}; epitaxial growth; III-nitride; molecular beam epitaxy; GaN; nucleation layer; nitridation; AlGaN; HFET; 2DEG density; AlN; 2DEG; buffer layer; sapphire; 2DEG mobility; heterostructure field effect transistor;

   Abstract : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. READ MORE

5. 3. Initial growth of GaN on sapphire and growth of AlGaN on GaN by molecular beam epitaxy

   Author : Stefan Davidsson; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MBE; 2DEG; heterostructure field effect transistor; molecular beam epitaxy; epitexial growth; GaN; III-nitride; AlGaN; two dimensional electron gas; HFET; AlN;

   Abstract : .... READ MORE

6. 4. Hot-wall MOCVD of N-polar group-III nitride materials and high electron mobility transistor structures

   Author : Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Fatemeh (Shadi) Shahedipour-Sandvik; Linköpings universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Nitrogen-polar; MOCVD; III-nitride; GaN; AlN; C-face SiC; HEMTs;

   Abstract : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). READ MORE

7. 5. Growth and characterization of SiC and GaN

   Author : Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

   Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE