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Showing result 1 - 5 of 112 swedish dissertations matching the above criteria.

  2. 1. AlN Thin Film Electroacoustic Devices

    Author : Gonzalo Fuentes Iriarte; I.V. Katardjiev; G.F. Iriarte; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical engineering; Elektroteknik; elektronik och fotonik; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; elektronik; Electronics;

    Abstract : Recently, the enormous growth in personal communications systems (PCS), satellite communication and various other forms of wireless data communication has made analogue frequency control a key issue as the operation frequency increases to the low/medium GHz range. Surface acoustic wave (SAW) and bulk acoustic wave (BAW) electroacoustic devices are widely used today in a variety of applications both in consumer electronics as well as in specialized scientific and military equipment where frequency control is required. READ MORE

  4. 2. GaN/AlN Multiple Quantum Well Structures

    Author : Xinju Liu; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; GaN; AlN; multiple quantum well; Molecular beam epitaxy; Si 111 ; intersubband transition; sapphire; GaN template;

    Abstract : The III-nitride semiconductors: InN, GaN and AlN are promising for photonic, high power and high temperature electronic devices. Their large and direct band gaps cover the range 0.7 to 6.2 eV, i. READ MORE

  5. 3. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

    Author : Stefan Davidsson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; two-dimensional electron gas; MBE; Al2< sub>O3< sub>; epitaxial growth; III-nitride; molecular beam epitaxy; GaN; nucleation layer; nitridation; AlGaN; HFET; 2DEG density; AlN; 2DEG; buffer layer; sapphire; 2DEG mobility; heterostructure field effect transistor;

    Abstract : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. READ MORE

  6. 4. Growth and Characterization of AlN : From Nano Structures to Bulk Material

    Author : Gholamreza Yazdi; Rositza Yakimova; Mikael Syväjärvi; Zlatko Sitar; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Physics; Fysik;

    Abstract : Aluminum nitride (AlN) exhibits a large direct band gap, 6.2 eV, and is thus suitable forsolid state white-light-emitting devices. It is capable in spintronics because of its high Curietemperature if doped with transition metals. READ MORE

  7. 5. Hot-wall MOCVD of N-polar group-III nitride materials and high electron mobility transistor structures

    Author : Hengfang Zhang; Vanya Darakchieva; Jr-Tai Chen; Ingemar Persson; Fatemeh (Shadi) Shahedipour-Sandvik; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Nitrogen-polar; MOCVD; III-nitride; GaN; AlN; C-face SiC; HEMTs;

    Abstract : Group III-Nitride semiconductors: indium nitride (InN), gallium nitride (GaN), aluminum nitride (AlN) and their alloys continue to attract significant scientific interest due to their unique properties and diverse applications in photonic and electronic applications. Group-III nitrides have direct bandgaps which cover the entire spectral range from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN). READ MORE