Search for dissertations about: "AlN"

Showing result 11 - 15 of 112 swedish dissertations containing the word AlN.

  2. 11. Initial growth of GaN on sapphire and growth of AlGaN on GaN by molecular beam epitaxy

    Author : Stefan Davidsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MBE; 2DEG; heterostructure field effect transistor; molecular beam epitaxy; epitexial growth; GaN; III-nitride; AlGaN; two dimensional electron gas; HFET; AlN;

    Abstract : .... READ MORE

  4. 12. AlN/GaN MQW structures - MBE growth and characterization

    Author : Xinju Liu; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : .... READ MORE

  5. 13. Growth of Wide-Band Gap AlN and (SiC)x(AlN)1-x Thin Films by Reactive Magnetron Sputter Deposition

    Author : Sukkaneste Tungasmita; Gregory W. Auner; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : The research presented in this thesis is focused on thin film synthesis of epitaxial wurtzite structure aluminum nitride (AlN) and related alloy, (SiC)x(AlN)1-x,by ultra-high-vacuum (UHV) reactive magnetron sputter deposition, on silicon carbide (6H-SiC) substrates. The emphasis of the work is on controlling the growth and quality of the films to be able to use the materials in electronic device applications. READ MORE

  6. 14. AlN and High-k Thin Films for IC and Electroacoustic Applications

    Author : Fredrik Engelmark; Ivan Petrov; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; Elektronik; Electronics; Elektronik; Elektronik; Electronics;

    Abstract : Further, a highly selective dry etch process for etching Al on AlN has been developed for the fabrication of MIM, MIS, SAW and BAW test structures for electrical and electroacoustic characterization of the films. A dielectric constant of 10 for AlN and 25 for Ti doped Ta2O5 have been measured. READ MORE

  7. 15. Synthesis of Thin Piezoelectric AlN Films in View of Sensors and Telecom Applications

    Author : Milena De Albuquerque Moreira; Ilia Dr.; Ioshiaki Dr.; Ricardo Cotrin; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Aluminum nitride; reactive sputtering; c-axis oriented films; tilted films; electroacoustic devices; piezoelectric materials; Aluminum Scandium Nitride; HiPIMS; high-k dielectric; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Abstract : The requirements of the consumer market on high frequency devices have been more and more demanding over the last decades. Thus, a continuing enhancement of the devices’ performance is required in order to meet these demands. In a macro view, changing the design of the device can result in an improvement of its performance. READ MORE