Search for dissertations about: "Artificial Atoms"
Showing result 31 - 35 of 36 swedish dissertations containing the words Artificial Atoms.
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31. Probing Atomic Scale Structure and Catalytic Properties of Cobalt Oxide Model Catalysts
Abstract : Cobalt oxides are known to be active catalysts for a number of chemical reactions, but very little is known about the atomic scale processesresponsible for the activity. The research presented in this thesis is focused on obtaining an atomic scale understanding of the chemistry of wellcharacterizedcobalt oxide model catalyst surfaces consisting of pristine and defective CoO and Co3O4 thin films with the (111) and (100)terminations supported by Ag(100), Ir(100), and Au(111) single crystal surfaces. READ MORE
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32. Nuclear safeguards directed to the application of multivariate analysis techniques to existing and future nuclear fuel cycles
Abstract : For as long as nuclear power has existed, there has been a concern for effectively safeguarding nuclear material since it was learned that it could be misused. Early on, many nations were interested in nuclear power, and therefore there was an urgent need to verify that it was only used for civilian purposes. READ MORE
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33. Naphthoxylosides Investigations into glycosaminoglycan biosynthesis
Abstract : Glycosaminoglycans (GAGs) are members of a family of polysaccharide structures consisting mostly of repeating disaccharide units. Most GAGs are attached to specific serine residues in proteins to form proteoglycans (PGs). READ MORE
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34. Degenerate and nondegenerate Josephson parametric oscillators for quantum information applications
Abstract : Parametric oscillations are well studied phenomena, with applications in amplification, quantum optics, and quantum information processing. They can occur as a parameter of a system, such as the resonant frequency, is being modulated or “pumped” by an external field. READ MORE
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35. Zeeman Interaction in Low-Dimensional III-V Semiconductor Structures
Abstract : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. READ MORE