Search for dissertations about: "Atomic Layer Epitaxy"

Showing result 1 - 5 of 25 swedish dissertations containing the words Atomic Layer Epitaxy.

  2. 1. Atomic layer epitaxy of copper

    Author : Per Mårtensson; Uppsala universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Chemistry; Atomic Layer Epitaxy; ALE; copper; ab initio calculations; DFT; CuCl; Cu thd 2; selectivity; Kemi; Chemistry; Kemi; Inorganic Chemistry; oorganisk kemi;

    Abstract : The high electric and thermal conductivity of copper has made it to a prime candidate as interconnect material in future integrated circuits. In this thesis, Atomic Layer Epitaxy has been used to deposit thin copper films on a variety of substrates, using both CuCl and Cu(II)2,2,6,6-tetramethyl-3,5-heptanedionate, Cu(thd)2, as precursors and hydrogen as reducing agent. READ MORE

  4. 2. Atomic Layer Deposition of Copper, Copper(I) Oxide and Copper(I) Nitride on Oxide Substrates

    Author : Tobias Törndahl; Jan-Otto Carlsson; Karin Larsson; Mikael Ottosson; Lauri Niinistö; Uppsala universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Inorganic chemistry; Atomic Layer Deposition; ALD; copper; copper I oxide; copper I nitride; deposition pathway; CuCl; Cu hfac 2; oxide substrates; epitaxy; DFT; ab-initio; Oorganisk kemi; Inorganic chemistry; Oorganisk kemi;

    Abstract : Thin films play an important role in science and technology today. By combining different materials, properties for specific applications can be optimised. READ MORE

  5. 3. Molecular beam epitaxy growth and characterization of GaN, AlN and AlGaN/GaN heterostructures

    Author : Stefan Davidsson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; two-dimensional electron gas; MBE; Al2< sub>O3< sub>; epitaxial growth; III-nitride; molecular beam epitaxy; GaN; nucleation layer; nitridation; AlGaN; HFET; 2DEG density; AlN; 2DEG; buffer layer; sapphire; 2DEG mobility; heterostructure field effect transistor;

    Abstract : The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that make them attractive for semiconductor devices in electronic and optic applications. A wide range of direct energy bandgaps (0.7 eV - 6.1 eV) can be obtained. READ MORE

  6. 4. Thin Film Synthesis of Nickel Containing Compounds

    Author : Erik Lindahl; Jan-Otto Carlsson; Jens Birch; Uppsala universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Chemical Vapor Deposition; CVD; Atomic Layer Deposition; ALD; Nickel nitride; Nickel oxide; Nickel; Epitaxy; multilayer; Thin film; Inorganic chemistry; Oorganisk kemi; Inorganic Chemistry; Oorganisk kemi;

    Abstract : Most electrical, magnetic or optical devices are today based on several, usually extremely thin layers of different materials.  In this thesis chemical synthesis processes have been developed for growth of less stable and metastable layers, and even multilayers, of nickel containing compounds. READ MORE

  7. 5. Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition

    Author : Julius Hållstedt; KTH; []
    Keywords : Silicon germanium carbon SiGeC ; Epitaxy; Chemical vapor deposition CVD ; Loading effect; High resolution x-ray diffraction HRXRD ; Hall measurements; Atomic force microscopy AFM .;

    Abstract : Heteroepitaxial SiGeC layers have attracted immenseattention as a material for high frequency devices duringrecent years. The unique properties of integrating carbon inSiGe are the additional freedom for strain and bandgapengineering as well as allowing more aggressive device designdue to the potential for increased thermal budget duringprocessing. READ MORE