Search for dissertations about: "Au GaAs"

Showing result 1 - 5 of 15 swedish dissertations containing the words Au GaAs.

  2. 1. Microstructure of the Schottky contact : Ag/GaAs and Au/GaAs

    Author : Qiu-Hong Hu; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Au; atom-probe fiels-ion microscopy; Schottky contact; interface; Ag; microstructure; transmission electron microscopy; GaAs; oxygen;

    Abstract : .... READ MORE

  4. 2. Atom-Probe Field-Ion Microscopy of Electronic Materials

    Author : Qiu-Hong Hu; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Au GaAs; ohmic contact; superconductors; oxygen ordering; AuGe GaAs; defects; Ag GaAs; Schottky contact; YBa2Cu3O6 delta; APFIM;

    Abstract : This thesis presents work in which atom-probe field-ion microscopy (APFIM) has been applied to two types of electronic materials. In the case of metal/GaAs contacts, the purpose was to characterise the microstructure of the contact interface, particularly the chemical composition variation across the interface. READ MORE

  5. 3. Atom Probe Field Ion Microscopy of Surface Zones, Coatings and Interfaces

    Author : Anders Kvist; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Ag GaAs; ohmiccontact; Au GaAs; Schottky contact; Cu3Au; APFIM; AuGe GaAs; gradient sintering; cemented carbides; CVD;

    Abstract : This thesis is focused on developingmethods for high resolution microanalysis of coatings on a substrate, andsurface zones of a bulk sample using atom probe field ion microscopy,APFIM. The APFIM technique is described and some examples of its applications to semiconductors,cemented carbides and intermetallic compounds are given. READ MORE

  6. 4. Epitaxial growth of semiconductor nanowires

    Author : Ann Persson; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; materialteknik; nanowires; nanostructures; growth mechanism; Materiallära; Material technology; Halvledarfysik; Semiconductory physics; nanoelectronics; Au; VSS; VLS; surface diffusion; band gap engineering; InP; ternary system; GaAs; heterostructures; InAs; CBE; epitaxy;

    Abstract : This thesis describes the results obtained from investigations carried out on epitaxially grown III-V semiconductor nanowires aimed at improving our understanding of and knowledge on the growth mechanism of nanowires. This is important to be able to control their growth, in order to make future applications possible. READ MORE

  7. 5. Crystal Structures in GaAs Nanowires: Growth and Characterization

    Author : Daniel Jacobsson; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Fysicumarkivet A:2015:Jacobsson;

    Abstract : With their nanometer size cross-section and high aspect ratio, semiconducting nanowires have properties that make them promising as building blocks in future electronic and optoelectronic devices. Because of their small size, their optical and electrical properties can differ from their bulk counterparts, and their geometry allows for material combinations not accessible in thin films. READ MORE