Search for dissertations about: "BEOL"

Showing result 1 - 5 of 8 swedish dissertations containing the word BEOL.

  2. 1. Silicon nanowire based devices for More than Moore Applications

    Author : Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
    Keywords : silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE

  4. 2. Graphene-based Devices for More than Moore Applications

    Author : Anderson Smith; Mikael Östling; Mihai Adrian Ionescu; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Graphene; Humidity Sensor; Pressure Sensor; GFET; CMOS; BEOL; More than Moore; Integration; Statistics;

    Abstract : Moore's law has defined the semiconductor industry for the past 50 years. Devices continue to become smaller and increasingly integrated into the world around us. Beginning with personal computers, devices have become integrated into watches, phones, cars, clothing and tablets among other things. READ MORE

  5. 3. III-V Nanowire MOSFET High-Frequency Technology Platform

    Author : Stefan Andric; Nanoelektronik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; III-V; nanowire NW ; Technology library; Process Monitor Structures; Radio Frequency; millimeter wave mmWave ; Compact Modelling; Circuit Design; Matching Networks; Low Noise Amplifier;

    Abstract : This thesis addresses the main challenges in using III-V nanowireMOSFETs for high-frequency applications by building a III-Vvertical nanowire MOSFET technology library. The initial devicelayout is designed, based on the assessment of the current III-V verticalnanowire MOSFET with state-of-the-art performance. READ MORE

  6. 4. Design and Characterization of MMIC IF VGA and Small Signal CMOS Millimeter Wave Amplifiers

    Author : M. Anowar Masud; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; BCB; CMOS; GaAs; LNA; VGA; MMIC; HEMT;

    Abstract : The main aim of this work is to demonstrate the easibility of designing and characterizing monolithic microwave integrated circuit (MMIC) variable gain amplifiers (VGA) and small signal amplifiers in III-V (GaAs) and 90 nm CMOS technologies, respectively. The VGA is studied at the IFfrequency of 2. READ MORE

  7. 5. Dynamics and Intrinsic Variability of Spintronic Devices

    Author : Corrado Carlo Maria Capriata; B. Gunnar Malm; Per-Erik Hellström; Dan Kuylenstierna; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; Spintronics; micromagnetic simulations; SHNO; MTJ; microwave measurements; realistic simulations; low-temperature measurements; fabrication; grains; Spinntronik; mikromagnetiska simuleringar; SHNO; MTJ; mikrovågsmätningar; realistiska simuleringar; lågtemperaturmätningar; nanotillverkning; korn; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Spintronics is a scientific domain focusing on utilizing electron spin for information processing. This is the element that distinguishes it from electronics, which only utilizes the charge of electrons. READ MORE