Search for dissertations about: "Barrier Gate"

Showing result 1 - 5 of 35 swedish dissertations containing the words Barrier Gate.

  2. 1. Fabrication, characterization, and modeling of metallic source/drain MOSFETs

    Author : Valur Gudmundsson; Per-Erik Hellström; Yee-Chia Yeo; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Metallic source drain; contact resistivity; Monte Carlo; NiSi; PtSi; SOI; UTB; tri-gate; FinFET; multiple-gate; nanowire; MOSFET; CMOS; Schottky barrier; silicide; SALICIDE;

    Abstract : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). READ MORE

  4. 2. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

    Author : Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; Electronics; Elektronik;

    Abstract : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. READ MORE

  5. 3. Carbon Nanotube Transistors: Nanotube Growth, Contact Properties and Novel Devices

    Author : Johannes Svensson; Göteborgs universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Carbon nanotube; chemical vapour deposition; Field effect transistor; Marangoni convection; Schottky barrier;

    Abstract : Carbon nanotubes (CNTs) are envisioned to be used as the basic building blocks in future electronics due to their excellent electronic properties such as high mobility, compatibility with high-k dielectrics and small diameters resulting in advantageous electrostatics. This thesis is divided into three separate topics related to increasing the fabrication yield and performance of CNT field effect transistors (CNTFETs). READ MORE

  6. 4. Design, Fabrication and Characterization of GaN HEMTs for Power Switching Applications

    Author : Björn Hult; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; DCIT; SCE; high voltage; isolation; ‘buffer-free’; gate dielectric; GaN HEMT; passivation; DIBL;

    Abstract : The unique properties of the III-nitride heterostructure, consisting of gallium nitride (GaN), aluminium nitride (AlN) and their ternary compounds (e.g. AlGaN, InAlN), allow for the fabrication of high electron mobility transistors (HEMTs). READ MORE

  7. 5. Characterization and Analysis of Surface Passivations and Gate Insulators for AlGaN/GaN Microwave HFETs

    Author : Martin Fagerlind; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; HFET; passivation characterization; passivation; AlGaN GaN heterostructure;

    Abstract : The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. READ MORE