Search for dissertations about: "Base drive circuits"

Found 3 swedish dissertations containing the words Base drive circuits.

  1. 1. On Reliability of SiC Power Devices in Power Electronics

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Diane-Perle Sadik; KTH.; [2017]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. READ MORE

  2. 2. High-Efficiency SiC Power Conversion Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Georg Tolstoy; KTH.; [2015]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Bipolar Junction Transistor BJT ; Resonant converter; Series-resonant converter SLR ; Base drive circuits; High- Efficiency Converters; High-Frequency Converters; Electrical Engineering; Elektro- och systemteknik;

    Abstract : This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. READ MORE

  3. 3. SiC Varactors for Dynamic Load Modulation of Microwave Power Amplifiers

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Christer Andersson; [2011]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nonlinear characterization; varactors; active load-pull; power; microwave; amplifier; dynamic load modulation; SiC; energy efficiency;

    Abstract : The rapid consumer adoption of mobile services is leading to an exponential growth in wireless data traffic. In order to accommodate more concurrent high data-rate users, the required complexity of transmitting radio base station (RBS) power amplifiers (PAs) is increasing. READ MORE