Search for dissertations about: "Bjt"

Showing result 1 - 5 of 22 swedish dissertations containing the word Bjt.

  1. 1. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Benedetto Buono; KTH.; [2012]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; diode; simulation; characterization; current gain; on-resistance; breakdown voltage; forward voltage drop; degradation; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Abstract : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. READ MORE

  2. 2. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors

    University dissertation from Stockholm : KTH

    Author : Hyung-Seok Lee; KTH.; [2008]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; current gain; specific on resistance RSP_ON ; breakdown voltage; forward voltage drop; surface recombination; ohmic contact.; TECHNOLOGY Electrical engineering; electronics and photonics; TEKNIKVETENSKAP Elektroteknik; elektronik och fotonik;

    Abstract : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. READ MORE

  3. 3. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Hossein Elahipanah; KTH.; KTH.; [2017]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Informations- och kommunikationsteknik; Information and Communication Technology; Electrical Engineering; Elektro- och systemteknik; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington;

    Abstract : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. READ MORE

  4. 4. High-Temperature Radio Circuits in Silicon Carbide Bipolar Technology

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Muhammad Waqar Hussain; KTH.; [2019]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; active down-conversion mixer; BJT; EM simulations; silicon carbide; high-temperature; IF amplifier; LTCC; negative resistance oscillator; passives; RF circuits; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : High-temperature electronics find many niche applications in downhole drilling, aviation, automotive and future exploration of inner planets like Venus and Mercury. Past studies have shown the potential of silicon carbide (SiC) electronics for catering these extreme temperature applications. READ MORE

  5. 5. On Reliability of SiC Power Devices in Power Electronics

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Diane-Perle Sadik; KTH.; [2017]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. READ MORE