Search for dissertations about: "Bjt"
Showing result 16 - 20 of 28 swedish dissertations containing the word Bjt.
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16. Experimental study and simulation of sintering of 316L components produced by binder jetting
Abstract : Binder Jetting (BJT) is a multi-step Additive Manufacturing (AM) technique that is used for producing components with highly complex geometries and competitive final properties with high productivity when compared to other AM technologies. The first step provides the basic part geometric shape (BJT printing), and the next step (debinding and sintering) consolidates the part to reach final geometry and intended basic material properties. READ MORE
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17. Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors
Abstract : The superior characteristics of Silicon Carbide as a wide band gap semiconductor have motivated many industrial and non-industrial research groups to consider SiC for the next generations of high power semiconductor devices. The SiC Bipolar Junction Transistor (BJT) is one candidate for high power applications due to its low on-state power loss and fast switching capability. READ MORE
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18. Sintering simulation framework for 316L stainless steel components manufactured by binder jetting
Abstract : Binder Jetting (BJT) is an additive manufacturing (AM) technology allowing mass-production of small to medium-size metal components. BJT is a multi-step AM technology, where the geometrical shape of components is provided during the printing step, and the final properties are achieved through a second consolidation step - sintering. READ MORE
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19. High power bipolar junction transistors in silicon carbide
Abstract : As a power device material, SiC has gained remarkable attention to its high thermal conductivity and high breakdown electric field. SiC bipolar junction transistors (BJTs) are interesting for applications as power switch for 600 V-1200 V applications. READ MORE
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20. Bipolar Silicon Carbide Integrated Circuits for High Temperature Power Applications
Abstract : Silicon Carbide (SiC) is suggested as a superior material for high temperature and high power electronic applications, thanks to its excellent properties. In this thesis, design and measurements of integrated circuits in bipolar 4H-SiC aiming for high temperature power applications are reported. READ MORE