Search for dissertations about: "C-V"

Showing result 1 - 5 of 24 swedish dissertations containing the word C-V.

  1. 1. DX Centers in AlGaAs

    University dissertation from Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden

    Author : Yingbo Jia; [1996]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; DX center; AlGaAs; GaAs AlGaAs multi-layer structures; C-V; DLTS; electric field dependence; positive-U and negative-U models; Schottky diodes; Halvledarfysik; Fysicumarkivet A:1996:Jia; Semiconductory physics; silicon; metastable states.;

    Abstract : This thesis presents a study of DX center related phenomena in silicon doped AlGaAs and in GaAs/AlGaAs multi-layer structures. A variety of experimental techniques such as capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), single shot capacitance, thermally stimulated capacitance (TSCAP), admittance spectroscopy, photocapacitance, and photoconductivity have been used. READ MORE

  2. 2. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

    University dissertation from Department of Electrical and Information Technology, Lund University

    Author : Jun Wu; Lunds universitet.; Lund University.; [2016]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

    Abstract : Popular Abstract in English Since 1947 when the first transistor was invented, electronics was transited into an unprecedented era. Different from a resistor that only has two terminals with the applied voltage and flowing current always obeying Ohm's law, a transistor has the third terminal in between, called "gate", which is made by, for metal-oxide-semiconductor field effect transistors (MOSFETs), an oxide layer sandwiched between the metal electrode and the semiconductor channel. READ MORE

  3. 3. Electrical Characterization of III-V Nanostructure

    University dissertation from Department of Electrical and Information Technology, Lund University

    Author : Aein Shiri Babadi; Lunds universitet.; Lund University.; [2016-10-17]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; High-κ; Metal-Oxide-Semicondcutor capacitors; MOSCAPs; III-V semiconductors; InAs; GaSb; interface traps; border traps; C-V; Simulations; Nanowire; MOSFET; Fabrication;

    Abstract : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. READ MORE

  4. 4. Detection and removal of traps at the SiO2/SiC interface

    University dissertation from Department of Electrical and Information Technology, Lund University

    Author : Halldor Olafsson; [2004]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface states; thermally stimulated current TSC ; positron annihilation spectroscopy PAS ; silicon carbide SiC ; metal-oxide-semiconductor field-effect transistor MOSFET ; transmission electron microscopy TEM ; deep level transient spectroscopy DLTS ; metal-oxide-semiconductor MOS ; field-effect mobility; capacitance-voltage C-V ;

    Abstract : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. READ MORE

  5. 5. Role of corticotropin-releasing factor, somatostatin and leptin in vagal nerve function and control of gastric emptying

    University dissertation from Stockholm : Karolinska Institutet, Department of Physiology and Pharmacology

    Author : Ulrika Smedh; Karolinska Institutet.; Karolinska Institutet.; [1998]
    Keywords : MEDICIN OCH HÄLSOVETENSKAP; MEDICAL AND HEALTH SCIENCES;

    Abstract : The overall aim of this thesis was to study the effects of centrally acting CRF and leptin, and peripherally acting somatostatin on gastric emptying of glucose. Freely moving rats bearing chronic intragastric fistulas received intragastric infusions (1.0 ml/min) of glucose (12.5 % or 25 %) during 6-18 min. READ MORE