Search for dissertations about: "C-V"

Showing result 1 - 5 of 31 swedish dissertations containing the word C-V.

  1. 1. Infrared and CO studies of the young stellar object L1551 IRS5 and its associated bipolar outflow

    University dissertation from Stockholm : Univ

    Author : C. V. Malcolm Fridlund; [1987]
    Keywords : ;

    Abstract : .... READ MORE

  2. 2. DX Centers in AlGaAs

    University dissertation from Department of Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden

    Author : Yingbo Jia; [1996]
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; DX center; AlGaAs; GaAs AlGaAs multi-layer structures; C-V; DLTS; electric field dependence; positive-U and negative-U models; Schottky diodes; Halvledarfysik; Fysicumarkivet A:1996:Jia; Semiconductory physics; silicon; metastable states.;

    Abstract : This thesis presents a study of DX center related phenomena in silicon doped AlGaAs and in GaAs/AlGaAs multi-layer structures. A variety of experimental techniques such as capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), single shot capacitance, thermally stimulated capacitance (TSCAP), admittance spectroscopy, photocapacitance, and photoconductivity have been used. READ MORE

  3. 3. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors

    University dissertation from Department of Electrical and Information Technology, Lund University

    Author : Jun Wu; [2016]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; MOS capacitor; C-V; XPS; MOVPE; InGaAs; InAs; High-k; RF; Track-and-hold circuit;

    Abstract : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. READ MORE

  4. 4. Electrical Characterization of III-V Nanostructure

    University dissertation from Department of Electrical and Information Technology, Lund University

    Author : Aein Shiri Babadi; [2016-10-17]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; High-κ; Metal-Oxide-Semicondcutor capacitors; MOSCAPs; III-V semiconductors; InAs; GaSb; interface traps; border traps; C-V; Simulations; Nanowire; MOSFET; Fabrication;

    Abstract : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. READ MORE

  5. 5. Deposition of high quality thin dielectrics on silicon

    University dissertation from Department of Electrical and Information Technology, Lund University

    Author : Lars-Åke Ragnarsson; [1996]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; oxynitride; metal-oxide-semiconductor capacitors; RPECVD; silicon dioxide; interfaces; si-SiO2; remote plasma-enhanced CVD; ONO; C-V; nitrided interfaces; SiO2; deposited dielectrics;

    Abstract : .... READ MORE