Search for dissertations about: "C3H8"

Showing result 6 - 9 of 9 swedish dissertations containing the word C3H8.

  2. 6. Chloride-based Silicon Carbide CVD

    Author : Henrik Pedersen; Erik Janzén; Anne Henry; Yaroslav Koshka; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Chemistry; Kemi;

    Abstract : Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. READ MORE

  4. 7. Experimental and Modeling Studies of Sulfur-Based Reactions in Oxy-Fuel Combustion

    Author : Daniel Fleig; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SO3; acid dew-point; coal combustion; oxy-fuel; sulfur; flue gas recycle; corrosion; Carbon capture and storage; H2SO4; SO2;

    Abstract : Oxy-fuel combustion is a technology for CO2 capture that is suitable for large-scale, coal-fired power plants. In this system, the combustion air is replaced by a mixture of O2 and recycled flue gases, so as to enrich for CO2 in the flue gas. READ MORE

  5. 8. CVD solutions for new directions in SiC and GaN epitaxy

    Author : Xun Li; Urban Forsberg; Erik Janzén; Henrik Pedersen; Sebastian Lourdudoss; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; CVD; SiC; GaN; epitaxy;

    Abstract : This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. READ MORE

  6. 9. Thermally stable electrical contacts to 6H silicon carbide

    Author : Nils Lundberg; Mikael Östling; Claude Jaussaud; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; I-V current -voltage ; C-V capacitance-voltage ; rectifying; ohmic; interface; silicide; carbide; epilayer; Schottky barrier height; current rectification ratio CRR ; specific contact resistivity; transmission line model TLM ; contact resistance; transfer length; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Silicon Carbide (SiC) are at present being developed for use in high temperature (≥ 500◦C) and high-power environments under which conventional semiconductors can hardly perform.  Thermally stable electrical contacts are essential to the ability of SiC to function under such extreme conditions. READ MORE