Search for dissertations about: "CIGS"
Showing result 21 - 25 of 25 swedish dissertations containing the word CIGS.
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21. Cadmium Free Buffer Layers and the Influence of their Material Properties on the Performance of Cu(In,Ga)Se2 Solar Cells
Abstract : CdS is conventionally used as a buffer layer in Cu(In,Ga)Se2, CIGS, solar cells. The aim of this thesis is to substitute CdS with cadmium-free, more transparent and environmentally benign alternative buffer layers and to analyze how the material properties of alternative layers affect the solar cell performance. READ MORE
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22. Potential-Induced Degradation and possibilities for recovery of CuIn1-xGaxSe2 thin film solar cells
Abstract : The long-term performance of solar modules is of key importance to achieve profitable solar power installations. In this work, the degradation mechanism potential-induced degradation (PID) was investigated for CuIn1-xGaxSe2 (CIGS) thin film solar cells. READ MORE
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23. Modeling and electrical characterization of Cu(In,Ga)Se2 and Cu2ZnSnS4 solar cells
Abstract : In this thesis, modeling and electrical characterization have been performed on Cu(In,Ga)Se2 (CIGS) and Cu2ZnSnS4 (CZTS) thin film solar cells, with the aim to investigate potential improvements to power conversion efficiency for respective technology. The modeling was primarily done in SCAPS, and current-voltage (J-V), quantum efficiency (QE) and capacitance-voltage (C-V) were the primary characterization methods. READ MORE
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24. First-Principles Study on Electronic and Optical Properties of Copper-Based Chalcogenide Photovoltaic Materials
Abstract : To accelerate environmentally friendly thin film photovoltaic (PV) technologies, copper-based chalcogenides are attractive as absorber materials. Chalcopyrite copper indium gallium selenide (CIGS ≡ CuIn1–xGaxSe2) is today a commercially important PV material, and it is also in many aspects a very interesting material from a scientific point of view. READ MORE
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25. Model-based Analysis and Design of Atomic Layer Deposition Processes
Abstract : Atomic layer deposition (ALD) is a thin-film manufacturing process in which the growth surface is exposed to non-overlapping alternating injections of gas-phase chemical precursor species separated by intermediate purge periods to prevent gas-phase reactions. ALD is characterized by sequential self-terminating heterogeneous reactions between highly reactive gas-phase precursor species and surface-bound species which, when allowed sufficient conditions to reach saturation, results in highly conformal films, on both planar and topographically complex structures. READ MORE