Search for dissertations about: "CMOS compatibility"

Showing result 1 - 5 of 11 swedish dissertations containing the words CMOS compatibility.

  2. 1. Integration of thulium silicate for enhanced scalability of high-k/metal gate CMOS technology

    Author : Eugenio Dentoni Litta; Per-Erik Hellström; Mikael Östling; Lars-Åke Ragnarsson; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; thulium; silicate; TmSiO; Tm2O3; interfacial layer; IL; CMOS; high-k; ALD; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. READ MORE

  4. 2. Spin Torque Oscillator Modeling, CMOS Design and STO-CMOS Integration

    Author : Tingsu Chen; Ana Rusu; Atila Alvandpour; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; STO technology; microwave oscillator; analytical model; macrospin approximation; Verilog-A model; high frequency CMOS circuits; balun-LNA; STO-IC integration; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Spin torque oscillators (STOs) are microwave oscillators with an attractive blend of features, including a more-than-octave tunability, GHz operating frequencies, nanoscale size, nanosecond switching speed and full compatibility with CMOS technology. Over the past decade, STOs' physical phenomena have been explored to a greater extent, their performance has been further improved, and STOs have already shown great potential for a wide range of applications, from microwave sources and detectors to neuromorphic computing. READ MORE

  5. 3. The RDGT - Integration of Micromechanics and Electronics by Plasma Assisted Wafer Bonding

    Author : Anke Sanz-Velasco; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; bonding; displacement measurement; oxygen plasma; low temperature wafer bonding; capacitive detection; high resolution; CMOS compatibility; MOSFET; low impedance sensing; resonant gate transistor;

    Abstract : A high-resolution capacitive sensing technique is presented in this thesis: the Resonant Double Gate Transistor (RDGT). The major advantage of the RDGT compared to "pure" capacitive sensing techniques is its low output impedance because of the direct capacitance to current conversion of the transistor. READ MORE

  6. 4. Towards the Integration of Carbon nanostructures into CMOS technology

    Author : Mohammad Kabir; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; transmission electron microscopy TEM .; chemical vapour deposition CVD ; electron beam lithography EBL ; carbon nanotube CNT ; silicidation; atomic force microscopy AFM ; carbon nanofiber CNF ; Complementary metal oxide semiconductor CMOS ; dc-glow discharge plasma; growth mechanism; metal catalyst; scanning electron microscopy SEM ;

    Abstract : Relentless efforts for miniaturization of traditional complementary metal oxide semiconductor (CMOS) devices have reached the limit where the device characteristics are governed by quantum phenomena which are difficult to control. This engendered a need for finding alternative new materials that can be engineered to fabricate devices that will possess at least the same or even better performance than existing CMOS devices. READ MORE

  7. 5. Toward Carbon based NEMS

    Author : Farzan Alavian Ghavanini; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; carbon nanotubes CNT ; Nanoelectromechanical systems; and CMOS compatibility ; CNT-based switch; vertically aligned carbon nanofibers VACNF ; NEMS;

    Abstract : A systematic analysis and assessment of carbon nanotube (CNT) based NEMS switches is presented and their features are compared to typical complementary metal-oxide-semiconductor (CMOS) performance parameters. It is shown that CNT-based switches with considerably smaller leakage current compared to CMOS switches can be realized. READ MORE