Search for dissertations about: "CMOS integration of nanowires"

Showing result 6 - 10 of 11 swedish dissertations containing the words CMOS integration of nanowires.

  2. 6. Vertical Nanowire High-Frequency Transistors

    Author : Sofia Johansson; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowires; III-V semiconductors; metal-oxide-semiconductor field-effect transistors; border traps; high-k;

    Abstract : This thesis explores a novel transistor technology based on vertical InAs nanowires, which could be considered both for low-power high-frequency analog applications and for replacing Si CMOS in the continued scaling of digital electronics. The potential of this device - the vertical InAs nanowire MOSFET – lies in the combination of the outstanding transport properties of InAs and the improved electrostatic control of the gate-all-around geometry. READ MORE

  4. 7. Deterministic Silicon Pillar Assemblies and their Photonic Applications

    Author : Bikash Dev Choudhury; Anand Srinivasan; Harish Bhaskaran; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; nanopillar; nanowires; nanophotonics; nanofabrication; silicon; photovoltaics; second-harmonic generation; top-down approach; colloidal lithography; color filter; biosensor; Fysik; Physics; Teknisk materialvetenskap; Materials Science and Engineering;

    Abstract : It is of paramount importance to our society that the environment, life style, science and amusement flourish together in a balanced way. Some trends in this direction are the increased utilization of renewable energy, like solar photovoltaics; better health care products, for example advanced biosensors; high definition TV or high resolution cameras; and novel scientific tools for better understanding of scientific observations. READ MORE

  5. 8. Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform

    Author : Anton E. O. Persson; Nanoelektronik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ferroelectricity; ferroelectric FET; ferroelectric tunnel junction; tunnel field effect transistors; HZO; III-V; nanowire;

    Abstract : The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide, has opened new possibilities for electronics by reviving the use of ferroelectric implementations on modern technology platforms. This thesis presents the ground-up integration of ferroelectric HfO2 on a thermally sensitive III-V nanowire platform leading to the successful implementation of ferroelectric transistors (FeFETs), tunnel junctions (FTJs), and varactors for mm-wave applications. READ MORE

  6. 9. Silicon Nanoribbon FET Sensors : Fabrication, Surface Modification and Microfluidic Integration

    Author : Roodabeh Afrasiabi; Jan Linnros; Michel Calame; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Over the past decade, the field of medical diagnostics has seen an incredible amount of research towards the integration of one-dimensional nanostructures such as carbon nanotubes, metallic and semiconducting nanowires and nanoribbons for a variety of bio-applications. Among the mentioned one-dimensional structures, silicon nanoribbon (SiNR) field-effect transistors (FET) as electro-chemical nanosensors hold particular promise for label-free, real-time and sensitive detection of biomolecules using affinity-based detection. READ MORE

  7. 10. III-V Devices for Emerging Electronic Applications

    Author : Patrik Olausson; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy; Cryogenic; Hall; III-V; InAs; InGaAs; Josephson junction; Magnetoresistance; MOSFET; Nanowire; Quantum well; Superconductivity; Template-assisted selective epitaxy;

    Abstract : Today’s digitalized society relies on the advancement of silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) technology, but the limitations of down-scaling and the rapidly increasing demand for added functionality that is not easily achieved in Si, have pushed efforts to monolithically 3D-integrate III-V devices above the Si-CMOS technology. In addition, the demand for increased computational power and handling of vast amounts of data is rapidly increasing. READ MORE