Search for dissertations about: "Carl Hemmingsson"
Found 4 swedish dissertations containing the words Carl Hemmingsson.
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1. Deep Levels in Electron-Irradiated and As-Grown SiC Power Device Material
Abstract : Silicon Carbide (SiC) has several favorable physical properties for the fabrication of highpower, high-temperature and high-frequency devices. Devices in SiC can operate at high temperatures due to the wide band gap and the high thermal stability of the material. READ MORE
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2. Deep levels in SiC
Abstract : Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for almost twenty years. Advances in SiC crystal growth especially the development of chemical vapor deposition (CVD) have enabled the fabrication of high quality material. READ MORE
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3. Electronic properties of intrinsic defects and impurities in GaN
Abstract : With its outstanding properties such as a wide direct bandgap (3.4 eV), high electron mobility and high breakdown voltage, GaN and its alloys with In and Al are considered as one of the most important semiconductors for optoelectronic devices and high-power and high-frequency transistors. READ MORE
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4. Electronic Characterization of CVD Diamond
Abstract : Diamond is a promising material for high-power, high-frequency and hightemperatureelectronics applications, where its outstanding physical propertiescan be fully exploited. It exhibits an extremely high energy gap, veryhigh carrier mobilities, high breakdown field strength, and the highest thermalconductivity of any wide bandgap material. READ MORE
