Search for dissertations about: "Chalmers Tekniska H"

Showing result 11 - 15 of 254 swedish dissertations containing the words Chalmers Tekniska H.

  2. 11. The effect of alkaline earth fluorides on some oxides of technical importance : a study of phase relations

    Author : Lars H. Hillert; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : .... READ MORE

  4. 12. Multidirectional Mobilities - Advanced Measurement Techniques and Applications

    Author : Lars H. Ivarsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; R-DOFs; substructuring; measurement techniques; rotational mobility; multidirectional mechanical mobility; hybrid coupling; coupling; moment mobility; impedance coupling; consistency;

    Abstract : Today high noise-and-vibration comfort has become a quality sign of products in sectors such as the automotive industry, aircraft, components, households and manufacturing. Consequently, already in the design phase of products, tools are required to predict the final vibration and noise levels. READ MORE

  5. 13. Six degrees of freedom acceleration measurements

    Author : Lars H. Ivarsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : .... READ MORE

  6. 14. A study on InAs/Ga1-χ-InχSb superlattices

    Author : Jöran H. Roslund; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Si-doping of Ga1- #967; < sub>-In #967; < sub>Sb; solderless substrate mounting; < sub>Sb superlattices; InAs Ga1- #967; envelope-function calculations; molecular-beam epitaxy; < sub>-In #967;

    Abstract : .... READ MORE

  7. 15. On the Growth and Properties of InAs/Ga1-xInxSb Superlattices and Related Materials

    Author : Jöran H. Roslund; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; molecular-beam epitaxy; InAs Ga1-xInxSb superlattices; envelope-function calculations; lattice-mismatched semiconductors; Si-doping of Ga1-xInxSb; type-II superlattices;

    Abstract : InAs/Ga1-xInxSb semiconductor superlattices and their constituent materials have been studied theoretically, grown by molecular-beam epitaxy and characterised by various techniques. InAs/Ga1-xInxSb superlattices are interesting for use in far-infrared detectors because of their narrow band gaps. READ MORE