Search for dissertations about: "Characterization of MOS Transistor"

Showing result 1 - 5 of 8 swedish dissertations containing the words Characterization of MOS Transistor.

  2. 1. Modeling and characterization of novel MOS devices

    Author : Stefan Persson; KTH; []
    Keywords : MOSFET; SiGe; high-k dielectric; metal gate; mobility; charge sheet model; retrograde channel structure; intrinsic charge; intrinsic capacitance; contact resistivity;

    Abstract : Challenges with integrating high-κ gate dielectric,retrograde Si1-xGexchannel and silicided contacts in future CMOStechnologies are investigated experimentally and theoreticallyin this thesis. ρMOSFETs with either Si or strained Si1-xGex surface-channel and different high-κgate dielectric are examined. READ MORE

  4. 2. Electrical Characterization of III-V Nanostructure

    Author : Aein Shiri Babadi; Institutionen för elektro- och informationsteknik; []
    Keywords : High-κ; Metal-Oxide-Semicondcutor capacitors; MOSCAPs; III-V semiconductors; InAs; GaSb; interface traps; border traps; C-V; Simulations; Nanowire; MOSFET; Fabrication;

    Abstract : This thesis investigates the electronic properties of a number of novel III-V materials and material combinations for transistor applications. In particular, high-κ/InAs metal-oxide-semiconductor (MOS) structures and transport properties of GaSb nanowires have been studied. READ MORE

  5. 3. Influence of Electron Charge States in Nanoelectronic Building Blocks

    Author : Johan Piscator; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; silicon nanowire; conductance method; MOS; Schottky barrier lowering; CV; silicon on insulator SOI ; high-k; interface states; Schottky contacts; TSC.;

    Abstract : The continued efforts to improve performance and decrease size of semiconductor logic devices are facing serious challenges. In order to further develop one of the most important nanoelectronic building blocks, the metal-oxide-semiconductor field-effect-transistor (MOSFET), several major problems have to be solved. READ MORE

  6. 4. Silicon device substrate and channel characteristics influenced by interface properties

    Author : Mikael Johansson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; channel; attenuation; zro2; interface; traps; semi-insulating; high-k; mos; cross-talk; hfo2;

    Abstract : This thesis is divided in two parts, one dealing with the depleted Si/Si structure, which is a substrate behaving as a semi-insulating material intended for radio-frequency applications and the other concerning high-k gate dielectrics (dielectrics with high dielectric constant) as the replacement for silicon dioxide as MOS gate dielectric.High frequency applications of CMOS integrated circuits, to lower cost, achieve higher performance and richer functionality, depends partly on the possibility to decrease the substrate coupling between different parts of the circuit. READ MORE

  7. 5. Design and Modeling of High-Frequency LDMOS Transistors

    Author : Lars Vestling; Andrej Litwin; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Materialvetenskap; Materials science; Teknisk materialvetenskap; Elektronik; Electronics;

    Abstract : The lateral double-diffused MOS (LDMOS) transistor has traditionally been a high-voltage device used in switching applications. The use as a high-frequency device has become more important lately since the LDMOS offers an low cost solution for telecommunication applications. READ MORE