Search for dissertations about: "Cryogenic low noise amplifier"
Showing result 1 - 5 of 15 swedish dissertations containing the words Cryogenic low noise amplifier.
-
1. Cryogenic low noise amplifiers for microwave frequencies
Abstract : .... READ MORE
-
2. Development of Cryogenic Low Noise 4-8 GHz HEMT Amplifier and its Advanced Characterization
Abstract : In most radio astronomy instrumentation, cryogenic low noise amplifiers (LNA) are used as intermediate frequency (IF) amplifiers. The system noise temperature is among the most important parameters of a receiver and requires state of the art components. READ MORE
-
3. Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications
Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. READ MORE
-
4. Design and Fabrication of InP High Electron Mobility Transistors for Cryogenic Low-Noise Amplifiers
Abstract : High electron mobility transistor (InP HEMT) cryogenic low noise amplifiers (LNAs) have made significant improvements in noise and gain following decades of development. Applications are found from radio astronomy to quantum computing. READ MORE
-
5. InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers
Abstract : The InAlAs/InGaAs/InP high-electron mobility transistor (InP HEMT) is the preferred low-noise device in cryogenic low-noise amplifiers (LNAs) operating at 5-15 K. Such LNAs are utilized in microwave and millimeter-wave detection in radio astronomy. READ MORE