Search for dissertations about: "DC power dissipation"

Showing result 1 - 5 of 8 swedish dissertations containing the words DC power dissipation.

2. 1. InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers

   Author : Eunjung Cha; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; indium channel content; electrical stability.; dc power dissipation; noise temperature; scaling; low-noise amplifier LNA ; InP high-electron mobility transistor InP HEMT ; cryogenic;

   Abstract : The InAlAs/InGaAs/InP high-electron mobility transistor (InP HEMT) is the preferred low-noise device in cryogenic low-noise amplifiers (LNAs) operating at 5-15 K. Such LNAs are utilized in microwave and millimeter-wave detection in radio astronomy. READ MORE

4. 2. Low-Power HEMT LNAs for Quantum Computing

   Author : Yin Zeng; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low-noise amplifier; qubit; Cryogenic; InP HEMT.; quantum computing; low-power;

   Abstract : The rapid development of quantum computing technology predicts much more qubits to handle in the detection, readout, and amplification of qubits than in today's system. Due to the limited cooling capability of the dilution refrigerator, the current low-noise amplifiers (LNAs) are in need of ten to hundred times reduced dc power consumption yet with lowest noise temperature at qubit readout frequencies, typcially 4-12 GHz. READ MORE

5. 3. Ultra-Low Noise InP HEMTs for Cryogenic Amplification

   Author : Joel Schleeh; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; DC power dissipation; MMIC; LNA; InP HEMT; ALD;

   Abstract : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. READ MORE

6. 4. Cryogenic Ultra-Low Noise InP High Electron Mobility Transistors

   Author : Joel Schleeh; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; LNA; cryogenic; low noise; DC power dissipation; ALD; GaAs MHEMT; gain fluctuations; InP HEMT;

   Abstract : Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for cryogenic low noise amplifiers at microwave frequencies. Record noise temperatures below 2 K using InP HEMT equipped cryogenic low noise amplifiers (LNAs) were demonstrated already a decade ago. READ MORE

7. 5. InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

   Author : Giuseppe Moschetti; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; metamorphic; high frequency; high electron mobility transistor HEMT ; low power; low noise.; InAs AlSb;

   Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology. The high electron mobility and high peak electron velocity of the InAs channel makes this device technology a potential candidate for low-noise applications operating at very low power dissipation. READ MORE