Search for dissertations about: "Darlington transistors"

Found 5 swedish dissertations containing the words Darlington transistors.

2. 1. Design Optimization and Realization of 4H-SiC Bipolar Junction Transistors

   Author : Hossein Elahipanah; Mikael Östling; Carl-Mikael Zetterling; Anders Hallèn; Adolf Schöner; Tsunenobu Kimoto; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; BJT; high-voltage and ultra-high-voltage; high-temperature; self-aligned Ni-silicide Ni-SALICIDE ; lift-off-free; wafer-scale; current gain; Darlington; Electrical Engineering; Elektro- och systemteknik; Informations- och kommunikationsteknik; Information and Communication Technology;

   Abstract : 4H-SiC-based bipolar junction transistors (BJTs) are attractive devices for high-voltage and high-temperature operations due to their high current capability, low specific on-resistance, and process simplicity. To extend the potential of SiC BJTs to power electronic industrial applications, it is essential to realize high-efficient devices with high-current and low-loss by a reliable and wafer-scale fabrication process. READ MORE

4. 2. Silicon Carbide BipolarTechnology for High Temperature Integrated Circuits

   Author : Luigia Lanni; Zetterling Carl-Mikael; Sei-Hyung Ryu; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide SiC ; bipolar junction transistor BJT ; current gain; surface passivation; SiC etching; complementary bipolar; lateral PNP; Darlington transistors; SPICE modeling; high-temperature; integrated circuits; emitter coupled logic ECL ;

   Abstract : The availability of integrated circuits (ICs) capable of 500 or 600° C operation can be extremely beneficial for many important applications, such as transportation and energy sector industry. It can in fact enable the realization of improved sensing and control of turbine engine combustion leading to better fuel efficiency and reduced pollution. READ MORE

5. 3. Fabrication Technology for Efficient High Power Silicon Carbide Bipolar Junction Transistors

   Author : Reza Ghandi; Martin Domeij; Anant Agarwal; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; Other engineering physics; Övrig teknisk fysik;

   Abstract : The superior characteristics of Silicon Carbide as a wide band gap semiconductor have motivated many industrial and non-industrial research groups to consider SiC for the next generations of high power semiconductor devices. The SiC Bipolar Junction Transistor (BJT) is one candidate for high power applications due to its low on-state power loss and fast switching capability. READ MORE

6. 4. Silicon Carbide High Temperature Photodetectors and Image Sensor

   Author : Shuoben Hou; Mikael Östling; Carl-Mikael Zetterling; Per-Erik Hellström; Anthony O'Neill; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide SiC ; high temperature; photodetector; photodiode; phototransistor; ultraviolet UV ; transistor-transistor logic TTL ; bipolar junction transistor BJT ; integrated circuit IC ; pixel sensor; image sensor; Informations- och kommunikationsteknik; Information and Communication Technology;

   Abstract : Silicon Carbide (SiC) has the advantages of ultraviolet (UV) sensing and high temperature characteristics because of its wide band gap. Both merits make SiC photodetectors very attractive in astronomy, oil drilling, combustion detection, biology and medical applications. READ MORE

7. 5. Integrated Oscillators in InGaP/GaAs HBT Technology

   Author : Szhau Lai; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Abstract : The thesis presents two major concerns in the design of low phase-noise MMIC VCOs; the active device model and the simulation tool. Besides, several design techniques to improve VCO tuning range and phase noise are investigated. The VCOs designed in this work are implemented in InGaP/GaAs HBT technology. READ MORE