Search for dissertations about: "Didier Chaussende"
Found 3 swedish dissertations containing the words Didier Chaussende.
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1. Sublimation Growth of 3C-SiC : From Thick Layers to Bulk Material
Abstract : Silicon carbide (SiC) is a semiconductor material which holds high promises for various device applications. It can be obtained in different crystal structures called polytypes. The most common ones are hexagonal (6H- and 4H-SiC) and cubic (3C-SiC) silicon carbide. READ MORE
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2. Growth of 3C-SiC and Graphene for Solar Water-Splitting Application
Abstract : Silicon carbide (SiC) is regarded as an important semiconductor for a variety of applications including high-temperature, high-power and high-frequency devices. The most common polytypes of SiC are hexagonal (4H- or 6H-SiC) and cubic silicon carbide (3C-SiC), which differ from each other by the ordering of the Si–C bilayers along the c-axis crystal direction. READ MORE
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3. Sublimation Growth and Performance of Cubic Silicon Carbide
Abstract : Silicon carbide (SiC) is a wide band gap semiconductor satisfying requirements to replace silicon in devices operating at high power and high frequency at high temperature, and in harsh environments. Hexagonal polytypes of SiC, such as 6H-SiC and 4H-SiC are available on the power device markets. READ MORE
