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Showing result 1 - 5 of 11 swedish dissertations matching the above criteria.

2. 1. Solubility Modelling in Condensed Matter. Dielectric Continuum Theory and Nonlinear Response

   Author : Lars Sandberg; KTH; []
   Keywords : Dielectric saturation; modified Langevin-Debye theory; screened Coulomb potential; electrostriction; implicit solvation model; hydration free energy; hydrophobicity; partition coefficient; pKa; biomolecular titration.;

   Abstract : .... READ MORE

4. 2. Electrical Insulating Properties of Poly(Ethylene-co-Butyl Acrylate) Filled with Alumina Nanoparticles

   Author : Nadejda Jäverberg; Hans Edin; John Fothergill; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanocomposites; poly ethylene-co-butyl acrylate ; EBA; alumina; dielectric permittivity; absorbed water; humidity; temperature; dielectric spectroscopy; breakdown strength; pre-breakdown current;

   Abstract : In this work the electrical insulating properties of the nanocomposite materials based on poly(ethylene-co-butyl acrylate) filled with alumina nanoparticles are studied. The dielectric properties chosen for the evaluation are the dielectric permittivity and loss as well as the breakdown strength and the pre-breakdown currents. READ MORE

5. 3. Impact of adjacent dielectrics on the high-frequency performance of graphene field-effect transistors

   Author : Muhammad Asad; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; high-frequency electronics; Graphene; transit frequency; contact resistance; MOGFETs; drift velocity; field-effect transistors; saturation velocity; maximum frequency of oscillation; diamond;

   Abstract : Transistors operating at high frequencies are the basic building blocks of millimeter wave communication and sensor systems. The high velocity and mobility of carriers in graphene can open ways for development of ultra-fast group IV transistors with similar or even better performance than that achieved with III-V based semiconductors. READ MORE

6. 4. Electrical properties of thermal oxides on SiC manufactured in an alumina furnace

   Author : Fredrik Allerstam; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; 6H-SiC; 4H-SiC; Silicon carbide; MOS; TDRC; CV; thermal dielectric relaxation current; interface states;

   Abstract : A process to achieve high inversion channel mobility in 4H-SiC MOSFETs is needed to enable manufacturing of devices for high power applications. In this thesis, investigations on the electrical properties of oxides produced in an alumina furnace are presented. READ MORE

7. 5. Graphene field-effect transistors for high frequency applications

   Author : Muhammad Asad; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; high frequency; Graphene; transit frequency; transconductance; maximum frequency of oscillation; contact resistance; microwave electronics; field-effect transistors;

   Abstract : Rapid development of wireless and internet communications requires development of new generation high frequency electronics based on new device concepts and new materials. The very high intrinsic velocity of charge carriers in graphene makes it promising new channel material for high frequency electronics. READ MORE