Search for dissertations about: "Dislocations in silicon"
Showing result 1 - 5 of 18 swedish dissertations containing the words Dislocations in silicon.
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1. Dislocations in silicon
Abstract : The topic of this thesis is theoretical studies of the electrical and structural properties in the elemental semiconductor silicon. Because of the numerous and powerful applications of semiconductors, e.g., rectifiers, transistors, solar cells and lasers, they have been the focus of huge amounts of research. READ MORE
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2. Design, Processing and Characterization of Silicon Carbide Diodes
Abstract : Electronic power devices made of silicon carbide promisesuperior performance over today's silicon devices due toinherent material properties. As a result of the material'swide band gap of 3. READ MORE
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3. Investigation of New Concepts and Solutions for Silicon Nanophotonics
Abstract : Nowadays, silicon photonics is a widely studied research topic. Its high-index-contrast and compatibility with the complementary metal-oxide-semiconductor technology make it a promising platform for low cost high density integration. READ MORE
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4. Characterization of Process-related Defects in Silicon Carbide by Electron Microscopy
Abstract : Silicon carbide (SiC) is a semiconducting material, which provides advantages compared to other available semiconducting materials. Attractive properties of SiC are the wide bandgap (2.2-3.3 eV), high electric breakdown field (3x106 Vcm-1), high thermal conductivity (5 Wcm-1 K-1) and the chemical stabi!ity. READ MORE
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5. Carrier Lifetime Relevant Deep Levels in SiC
Abstract : Silicon carbide (SiC) is currently under development for high power bipolar devices such as insulated gate bipolar transistors (IGBTs). A major issue for these devices is the charge carrier lifetime, which, in the absence of structural defects such as dislocations, is influenced by point defects and their associated deep levels. READ MORE